Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

Damrongplasit, Nattapol; Shin, Changhwan; Kim, Sung Hwan; Vega, Reinaldo A.; Liu, Tsu‐Jae King

doi:10.1109/ted.2011.2161990

Cited by 160 publications

(60 citation statements)

References 17 publications

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“…The other problem with the TFET is that in aggressively scaled devices, random variability in transistor performance due to random dopant fluctuations (RDF) can become significant [15]. The effects of RDF, such as an unacceptably large increase in the OFF-state current, have recently been demonstrated in TFETs [16][17][18][19]. The presence of doped source and drain regions in TFETs also necessitates a complex thermal budget due to the need for ion implantation and expensive thermal annealing techniques [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Kumar

Janardhanan

2013

IEEE Trans. Electron Devices

550

249

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Abstract-Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions are formed using the charge plasma concept by choosing appropriate work functions for the source and drain metal electrodes. Our results show that the performance of the doping-less TFET is similar to that of a corresponding doped TFET. The doping-less TFET is expected to be free from problems associated with random dopant fluctuations. Further, fabrication of doping-less TFET does not require high-temperature doping/annealing processes and therefore, cuts down the thermal budget opening up the possibilities for fabricating TFETs on single crystal silicon-onglass substrates formed by wafer scale epitaxial transfer.

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Section: Introductionmentioning

confidence: 99%

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Kumar

Janardhanan

2013

IEEE Trans. Electron Devices

550

249

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“…The optimized structure [22] is taken to be the nominal design in this paper. The nominal device structure is shown in Fig.…”

Section: A Tfet Design and Tcad Models Usedmentioning

confidence: 99%

“…Therefore, the electrical behavior is strongly dependent on the geometry as well as the doping of this region. The impact of RDF was previously examined in [22], [23]. Since gate LER can affect the length of the gate-to-source overlap region, it is important to also assess the impact of gate LER.…”

mentioning

confidence: 99%

Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET Performance

Damrongplasit

Kim²,

Shin

et al. 2013

IEEE Trans. Nanotechnology

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The impact of gate line-edge roughness (LER) on the performance of the planar germanium-source tunnel FET with gate length L g = 30 nm is studied via 3-D device simulation. Depending on the source formation process, gate LER can result in source LER. Therefore, two extreme cases of the source edge profile are considered herein: smooth edge and rough edge. Threshold voltage V T variation due to gate LER is found to be minimal in each case, as compared to V T variation caused by random dopant fluctuations (RDF). Gate LER is also found to have negligible impact on the off-state leakage current floor. In the case of a source with smooth edge, gate-LER induced variation in on-state drive current can be significant.

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“…It is because the electrical characteristics of TFETs are mainly determined by gate metal WF values near the source region where band-to-band tunneling mainly Table I. occurs. Because the process-induced variation is a big obstacle to TFET circuit design [7]- [10], design strategies need to be investigated for the suppression of WFV of TFETs. As discussed earlier, WFV stems from different grain orientations in metal gate.…”

Section: Introductionmentioning

confidence: 99%

Influence of Preferred Gate Metal Grain Orientation on Tunneling FETs

Choi

Lee

et al. 2015

IEEE Trans. Electron Devices

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The novel effects of preferred gate metal grain orientation on tunneling FETs (TFETs) have been investigated for the first time. It has been observed that TFETs have preferred gate metal grain orientation to lower work-function variation (WFV) unlike MOSFETs. In the case of TFETs, when the metal gate grain orientation with low work function is dominant, the WFV is effectively suppressed. This brief provides a design guideline for the suppression of TFET WFV.

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Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

Cited by 160 publications

References 17 publications

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET Performance

Influence of Preferred Gate Metal Grain Orientation on Tunneling FETs

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