Study of radiation detection properties of GaN pn diode

Sugiura, Mutsuhito; Kushimoto, Maki; Mitsunari, Tadashi; Yamashita, Kanae; Honda, Yoshio; Amano, Hiroshi; Inoue, Yasuo; Mimura, Hidenori; Aoki, Toru; Nakano, Takayuki

doi:10.7567/jjap.55.05fj02

Cited by 18 publications

(12 citation statements)

References 34 publications

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“…X-ray detectors have widely been used for several applications including nondestructive inspection of industrial goods, medical imaging, security scrutiny, and homeland defense. , High-quality semiconductors are mainly used for fabricating X-ray detectors due to their simple device configuration, high detection sensitivity, and the unique property of directly converting X-rays into desired electrical signals. − Among various semiconducting materials, cadmium telluride (CdTe), amorphous selenium (α-Se), and silicon (Si) have been utilized extensively to fabricate commercial direct-mode X-ray detectors and imagers. However, these materials suffer from small Z (atomic number) and/or insufficient mobility-lifetime (μτ) products and high processing costs.…”

Section: Introductionmentioning

confidence: 99%

Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)₂PbI₄ Perovskite Single Crystals

et al. 2022

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Organic–inorganic hybrid metal-halide perovskites have emerged as potential semiconductors for high-performance X-ray detection owing to their large radiation stopping power, high sensitivity, large mobility-lifetime (μτ) product, and facile fabrication strategies. In recent times, two-dimensional (2D) layered perovskite-based X-ray detectors have attracted significant attention owing to their superior ambient and thermal stability, reduced ion migration, and low defect density. Notably, in 2D perovskites, the larger organic amine spacer integrated alternately between inorganic lead halide octahedral layers can effectively restrict ion migration even for higher bias voltages in X-ray detection. In this work, we have fabricated centimeter-sized high-quality butyl amine organic spacer-incorporated n = 1 layered Ruddlesden–Popper (RP) phase (BA)2PbI4 2D perovskite single crystals using a conventional slow cooling method and demonstrated their X-ray detection and imaging applications. The (BA)2PbI4 single crystal detector exhibits an excellent X-ray performance with a sensitivity of 148 μCGy–1 cm–2 at 10 V mm–1 applied electric field, an ultralow detection limit less than 241 nGy s–1, a very low and stable dark current (20.52 pA), and a quick response time of ∼4 ms. Moreover, the fabricated devices have shown remarkably stable responses for continuous X-ray exposure over 60 min and ultrahigh storage stability of over 4 months, confirming the material robustness and stability. Finally, high-resolution X-ray imaging is demonstrated using these (BA)2PbI4 single crystal-based detectors. The exceptional operational stability and high performance of (BA)2PbI4 X-ray detectors make them promising candidates for low-dose X-ray detection and imaging applications.

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Section: Introductionmentioning

confidence: 99%

Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)₂PbI₄ Perovskite Single Crystals

et al. 2022

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“…Sugiura, M. et al has recently reported for the first time a p-n diode-based α-particle detector. Figure 4 shows the schematic of GaN p-n diode used for α-particle detection [30]. These p-n diodes exhibited a mobility/life-time product of 4.6 × 10 −5 cm 2 /V which is lower than the values reported for CdTe (~10 −3 cm 2 /V) and TlBr (~10 −3 cm 2 /V).…”

Section: P-n Diodesmentioning

confidence: 93%

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Sandupatla

Arulkumaran

et al. 2020

Micromachines

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Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of −2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (−20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at −750 V.

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“…CCE values above 90% were achieved; however, high voltages were required to reach these CCE magnitudes. , By fabricating a Schottky barrier diode based on a thin GaN layer grown epitaxially on freestanding GaN with a low threading dislocation density, Sandupatla et al were able to achieve good CCE values at lower voltages, more specifically, a CCE above 60% was obtained when applying a reverse bias of 20 V . α Particle detection was also demonstrated using detectors based on p–n and p–i–n junctions. − Recently, Hou et al fabricated a detector by growing a GaN p–i–n structure on top of a 350 μm thick GaN substrate. When considering solely the energy deposited in the depletion region of the detector, they measured a CCE of 92% when applying a reverse bias of 50 V. When operating the detector in self-powered mode, the CCE decreased to 31% .…”

Section: Introductionmentioning

confidence: 99%

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

Verheij,

Vićentijević,

Jakšić

et al. 2024

ACS Appl. Electron. Mater.

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We report on the charge collection efficiency (CCE) of GaN core−shell p−n junction microwires obtained through high-precision ion-beam-induced charge (IBIC) measurements. Single wires are processed into working radiation detectors using a set of microfabrication processes and are irradiated with either 1 MeV or 750 keV Si ions. We show that we are able to accurately probe the microwires and measure structures that have dimensions below 1 μm. CCE maps show that the detectors are efficient in collecting the charge induced by the Si ions, presenting average CCE magnitudes between 20 and 30% when applying a small reverse bias. Additionally, three-dimensional Monte Carlo simulations were carried out to gain a better understanding of the energy deposition in the depletion region of the p−n junction. Comparison between the experimental and simulated data shows good agreement despite also revealing some drawbacks associated with the microwire detectors, namely, the poor collection efficiency of charge carriers generated in the neutral n-GaN core. Nevertheless, the average CCE of the detectors is promising, especially when only considering the energy deposited in the active region of the detector. In this case, depending on the applied bias, we obtain a CCE between 45 and 80%.

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Study of radiation detection properties of GaN pn diode

Cited by 18 publications

References 34 publications

Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)₂PbI₄ Perovskite Single Crystals

Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)₂PbI₄ Perovskite Single Crystals

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

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Study of radiation detection properties of GaN pn diode

Cited by 18 publications

References 34 publications

Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)2PbI4 Perovskite Single Crystals

Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)2PbI4 Perovskite Single Crystals

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

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Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)₂PbI₄ Perovskite Single Crystals

Efficient and Highly Stable X-ray Detection and Imaging using 2D (BA)₂PbI₄ Perovskite Single Crystals