Study of platinum thin films deposited by MOCVD as electrodes for oxide applications

Valet, Oliver; Doppelt, P.; Baumann, P. K.; Schumacher, M.; Balnois, Eric; Bonnet, Fanny; Guillon, Hervé

doi:10.1016/s0167-9317(02)00821-3

Cited by 18 publications

(5 citation statements)

References 8 publications

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“…Although Valet et al [18] observed the preferential growth of (111)Pt on a SiO 2 surface at T sub = 350±400 C using 20 sccm of He and 50 sccm of O 2 , the degree of (111) orientation was not reported.…”

Section: Crystallinitymentioning

confidence: 96%

“…Moreover, H 2 cannot be used to deposit Pt films on MCO since atomic hydrogen generated by the catalytic activity of Pt nuclei could degrade the dielectric properties of MCO. In order to circumvent these problems, Valet et al [18] [1,14,17,22,23] is an attractive precursor for MOCVD because of its insensitivity to air and moisture, and also the fact that it is commercially available more cheaply than (CH 3 ) 3 CH 3 CpPt. However, Pt(acac) 2 has a low vapor pressure, 1 torr at 180 C. [1] Malandrino et al [23] reported the deposition of Pt films from Pt(acac) 2 in oxygen at temperatures of 200±500 C, using a very high sublimation temperature, 170 C. However, conventional sublimation techniques for solid precursors cause great difficulties in obtaining reliable and reproducible films with uniform thickness at high growth rates.…”

Section: Introductionmentioning

confidence: 99%

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MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity

Goswami¹,

Wang

Cao

et al. 2003

Chemical Vapor Deposition

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A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12±140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350 C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal±organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH 3 ) 3 CH 3 CpPt], and b) platinum acetylacetonate [Pt(acac) 2 ], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac) 2 exhibited a preferred (111) orientation with a X-ray intensity ratio of I (111) /I (200) = 40, the films deposited from (CH 3 ) 3 CH 3 CpPt were highly (111) oriented with I (111) /I (200) = 270. The following properties were typical of Pt films from Pt(acac) 2 as compared to Pt films from (CH 3 ) 3 CH 3 CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac) 2 occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH 3 ) 3 CH 3 CpPt was limited by the mass transport rate. Additionally, the temperature (4.2±293 K) dependence of the electrical resistivities (r) of Pt films was measured and the electron mean free paths were estimated. It was observed that r(T) deviated from Matthiessen's rule.

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Section: Crystallinitymentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity

Goswami¹,

Wang

Cao

et al. 2003

Chemical Vapor Deposition

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“…Metal thin films can be grown by a variety of techniques, including: physical vapor deposition (PVD); 1 molecular beam epitaxy (MBE), [2][3][4] chemical vapor deposition (CVD), 5,6 metallorganic chemical vapor deposition (MOCVD) [7][8][9] and electrodeposition. [10][11][12][13][14] Electrodeposition is a simple, cost effective, low temperature process for the formation of metal films.…”

mentioning

confidence: 99%

Electrochemical Atomic Layer Deposition (E-ALD) of Pt Nanofilms Using SLRR Cycles

Jayaraju¹,

Vairavapandian²,

Kim³

et al. 2012

J. Electrochem. Soc.

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This paper describes platinum nanofilm formation via the electrochemical form of atomic layer deposition (E-ALD), where the E-ALD cycles are based on surface limited redox replacement (SLRR) reaction. SLRR is where an atomic layer (AL) of a reactive (sacrificial) metal is exchanged for a more noble metal. In the present study both Cu and Pb AL were investigated as sacrificial atomic layers for replacement with both Pt(II) and Pt(IV) precursors. 25 E-ALD cycles were used to form Pt nanofilm deposits. Initial deposits contained an order of magnitude more Pt than expected, evidenced by a factor of 7 increase in surface roughness. Overly positive potentials achieved during the exchange promoted excess deposition and surface roughening. It is proposed that anionic Pt precursors adsorbed more strongly at high potentials, making them difficult to rinse from the cell. Those remaining adsorbed Pt anions are then reduced to Pt o when the potential was shifted negative for deposition of the sacrificial element. The result was Pt o formation at a large overpotential, which, contributed to excessive Pt deposits and roughening. Increased rinsing of the anionic Pt precursors from the cell eliminated the excess Pt deposition and roughening, resulting in the expected layer by layer growth of an ALD process.

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“…This (111) orientation is typical for the growth of fcc metals, since it presents the lowest surface energy and the highest atomic density. [16] The weak preferential orientation in sample Pt2 is probably due to the low thickness of the film (14 nm). [2] At 473 K, the intense autocatalytic behavior favors growth to the extent of nucleation, resulting in large mean size of the crystallites.…”

Section: S1mentioning

confidence: 99%

Platinum Protective Coatings Processed by Organometallic CVD

Vahlas¹,

Delmas²

2008

Chemical Vapor Deposition

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Communication: Platinum deposition by OMCVD from (Me3(MeCp)Pt) for protective coatings applications has been studied. Films grown at 473 K and 573 K on a Ti6242 alloy show a continuous microstructure, with growth rate of 19 nm · min−1 and 2.5 nm · min−1, respectively. No preferential orientation is observed at the latter temperature, while at 473 K films are textured following (111) orientation. The plot of thicknesses versus time at 473 K reveals an induction period followed by an autocatalytic growth. Platinum acts as a catalyst for the precursor decomposition when clusters reach critical size. At 573 K desorption of precursor from the surface prevents autocatalytic behaviour to appear resulting in decrease of the growth rate.

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Study of platinum thin films deposited by MOCVD as electrodes for oxide applications

Cited by 18 publications

References 8 publications

MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity

MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity

Electrochemical Atomic Layer Deposition (E-ALD) of Pt Nanofilms Using SLRR Cycles

Platinum Protective Coatings Processed by Organometallic CVD

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Study of platinum thin films deposited by MOCVD as electrodes for oxide applications

Cited by 18 publications

References 8 publications

MOCVD of Platinum Films from (CH3)3CH3CpPt and Pt(acac)2: Nanostructure, Conformality, and Electrical Resistivity

MOCVD of Platinum Films from (CH3)3CH3CpPt and Pt(acac)2: Nanostructure, Conformality, and Electrical Resistivity

Electrochemical Atomic Layer Deposition (E-ALD) of Pt Nanofilms Using SLRR Cycles

Platinum Protective Coatings Processed by Organometallic CVD

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Product

Resources

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MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity

MOCVD of Platinum Films from (CH₃)₃CH₃CpPt and Pt(acac)₂: Nanostructure, Conformality, and Electrical Resistivity