Study of photoluminescence quenching in porous silicon layers that using for chemical solvents vapor sensor

Nayef, Uday M.; Hussein, Haitham T.; Hussien, Adi M. Abdul

doi:10.1016/j.ijleo.2018.07.112

Cited by 49 publications

(7 citation statements)

References 18 publications

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“…The effect of changing the etching current densities in making porous silicon was clear on the pore diameter and surface roughness, and this is consistent with the results of the AFM examination, where the pore roughness was equal to (2.44 nm) and the pore diameter was equal to (23.05nm) at J = 12 mA/cm 2 , while at J = 30 mA/cm 2 The surface roughness is (8.63 nm) and the pore diameter is (26.23 nm). This is also consistent with the results of the SEM examination, where the higher the etching current density, the greater the pore diameter, the higher the surface roughness and the smaller the pore wall, and this leads to an increase in the surface area exposed to the gas and an increase in the energy gap on the surface [6,7]. The lowest ethanol gas response was also obtained for Ra / Rg =1.313257 at etching current density of 12 mA / cm 2 .but at ethanol gas the higher sensitivity was (0.380801) at etching current density J=12mA/cm 2 then at J= (24mA/cm 2 ) about Ra / Rg= (0.161195093) and the lowest was at J=30 mA/cm 2 with Ra / Rg= (0.12389692).…”

Section: Resultssupporting

confidence: 90%

“…PSi has a property, namely the ability to adjust porosity, which makes it appropriate for a wide range of gas sensor applications [4]. So it can be used for wide application areas including Light-emitting diode, dielectric waveguides, chemical, and biological sensors, solar cell (antireflection coating), field emission device, and photo-detector [5] Furthermore, PSi is a frequently utilized and intriguing material for its nanostructures [6]. It features a large surface area with a customizable shape and strong light interaction.…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Current Density on the Properties of Porous Silicon Gas Sensor for Ethanol and Methanol Vapour Detection

Kareem¹,

M.²,

Hussein³

2021

JASN

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In this paper, Gas sensors for ethanol and methanol were created utilizing porous silicon (PSi).n-type silicon was employed for all PSi samples, photo-electrochemical etching technique (PECE) was used to prepare porous surface. The intensity of the three etchings current densities was 12, 24 and 30 mA / cm 2 , with 40% hydrofluoric acid concentration (HF) and a time of etching 10 minutes. Porous silicon (100) has been strictly studied by the structure and formation of surface bonding of the PSi layer; the structural properties, morphological characteristics, pore diameter, and roughness were described using Xray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). All PSi samples were applied as a sensor for ethanol and methanol at room temperature. The results showed that the best sensitivity of PSi was to ethanol gas compared to methane under the same used conditions at etching current density 30mA/cm2, reaching about 1.809 at a concentration of 500 ppm. From these results, the PSi layers act as high-quality, low-cost gas sensors. It can be used as a replacement for expensive material that is used as gas sensors, which operate at low temperatures, including room temperature. The interest in this material is due to study the effect of extremely high surface to volume ratio (increasing surface area), and easy manufactured and compatibility with modern silicon microelectronics manufacturing technologies.

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Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

The Effect of Current Density on the Properties of Porous Silicon Gas Sensor for Ethanol and Methanol Vapour Detection

Kareem¹,

M.²,

Hussein³

2021

JASN

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“…These results indicated that the PL quenching depended on not only the vapor pressure of the analytes, but also the functionalities of organic molecules. Additionally, Nayef et al reported [ 22 ] that PL quenching is related to the dipole moment of organic molecules. This finding can be interpreted as being due to the stabilization of the PSi surface trap by the alignment of the dipoles of the organic molecules.…”

Section: Resultsmentioning

confidence: 99%

A Novel Chemical Gas Vapor Sensor Based on Photoluminescence Enhancement of Rugate Porous Silicon Filters

Zhou

Sohn

2020

Sensors

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In this study, an innovative rugate filter configuration porous silicon (PSi) with enhanced photoluminescence intensity was fabricated. The fabricated PSi exhibited dual optical properties with both sharp optical reflectivity and sharp photoluminescence (PL), and it was developed for use in organic vapor sensing. When the wavelength of the resonance peak from the rugate PSi filters is engineered to overlap with the emission band of the PL from the PSi quantum dots, the PL intensity is amplified, thus reducing the full width at half maximum (FWHM) of the PL band from 154 nm to 22 nm. The rugate PSi filters samples were fabricated by electrochemical etching of highly doped n-type silicon under illumination. The etching solution consisted of a 1:1 volume mixture of 48% hydrofluoric acid and absolute ethanol and photoluminescent rugate PSi filter was fabricated by etching while using a periodic sinusoidal wave current with 10 cycles. The obtained samples were characterized by scanning electron microscopy (SEM), and both reflection redshift and PL quenching were measured under exposure to organic vapors. The reflection redshift and PL quenching were both affected by the vapor pressure and dipole moment of the organic species.

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“…The final products were deposited on the glass substrates by chemical spray pyrolysis at 300 • C and an atmospheric pressure of 7.5 bar lasting 5 seconds as the Figure1b. The reaction was investigated by the following equation [19]: 3b. In addition, the porous silicon peak is shifting slightly to small diffraction angle with increasing concentration.…”

Section: Synthesis and Deposition Of Znsmentioning

confidence: 99%

Properties investigation of ZnS/porous silicon heterojunction for gas sensing

Mohammed Ameen,

Younus,

Ali

2024

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In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as-prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at ZnS concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The ZnS-PSi heterojunction based gas sensor may be used for UV-light photo-detectors due to a valuable properties such as high sensitivity and fast response.

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Study of photoluminescence quenching in porous silicon layers that using for chemical solvents vapor sensor

Cited by 49 publications

References 18 publications

The Effect of Current Density on the Properties of Porous Silicon Gas Sensor for Ethanol and Methanol Vapour Detection

The Effect of Current Density on the Properties of Porous Silicon Gas Sensor for Ethanol and Methanol Vapour Detection

A Novel Chemical Gas Vapor Sensor Based on Photoluminescence Enhancement of Rugate Porous Silicon Filters

Properties investigation of ZnS/porous silicon heterojunction for gas sensing

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