Epitaxial YBa 2 Cu 3 O 7 (Y123) films were obtained by metal-organic deposition (MOD) using a simple, low-cost vacuum technique without gas flowing. The total pressure and oxygen partial pressure in the furnace were controlled to be 10 kPa and 10 Pa, respectively, by evacuation with a rotary pump followed by refilling with a mixture of O 2 and N 2 (O 2 content: 1000 ppm). XRD analyses exhibited that -axis-oriented epitaxial Y123 films have successfully been obtained on CeO 2 -buffered YSZ (100) (CbZ) and CeO 2 -buffered sapphire (012) (CbS) substrates. In-plane alignments of these films were as high as that of the CeO 2 buffer layer. The film on the CbZ demonstrated a high critical current density c of 2 1 MA cm 2 at 77 K all over the film; the fluctuation of c being within 10% of the average. Inductive c measurement showed a very sharp peak with c = 90 5 K. Inductive-c and c of the Y123 film on CbS were 1.1 MA cm 2 and 89.6 K, respectively, whereas the c of the Y123 film on LaAlO 3 was lower than 77 K owing to the occurrence of the -axis grains.Index Terms-Critical current density, epitaxial Y123 film, metal-organic deposition, vacuum.