2020
DOI: 10.1039/d0cp01739f
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Study of persistent luminescence and thermoluminescence in SrSi2N2O2:Eu2+,M3+(M = Ce, Dy, and Nd)

Abstract:

The process of persistent luminescence or glow-in-the-dark – delayed emission of light of irradiated substance has long fascinated researchers, who made efforts to explain the underlying physical phenomenon as well...

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Cited by 12 publications
(10 citation statements)
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“…In these inorganic LPL materials, holes or electrons generated by the photoexcitation of the metal-oxide crystal are accumulated in dopants that act as charge-trapping sites. Gradual charge recombination followed by thermal detrapping produces hour-long emissions 4,5,6 . Inorganic LPL materials are insoluble in any solvent, and require grinding into microparticles before dispersion into solvents or polymers for practical applications.…”
mentioning
confidence: 99%
“…In these inorganic LPL materials, holes or electrons generated by the photoexcitation of the metal-oxide crystal are accumulated in dopants that act as charge-trapping sites. Gradual charge recombination followed by thermal detrapping produces hour-long emissions 4,5,6 . Inorganic LPL materials are insoluble in any solvent, and require grinding into microparticles before dispersion into solvents or polymers for practical applications.…”
mentioning
confidence: 99%
“…Such a broad band indicates that there is a wide distribution of traps in this material. The TL peak position in a range of 50–120 °C is favorable for the excellent PersL performance. Along with the increase of the Bi 3+ ion doping concentration, the intensity of the TL peak appears to first increase and then decrease, reaching the maximum at a doping concentration of 0.2%. A further increase of the Bi 3+ ion doping concentration makes the interaction between traps enhanced, decreases the number of effective traps, and worsens the PersL performance.…”
Section: Resultsmentioning
confidence: 99%
“…Compared with the traditional optical information storage technologies, the novel full-color optical information storage technology based on advanced optical materials has been developed [3][4][5][6][7]. A series of deep-trap greenemitting and blue-emitting luminescence materials such as Eu 2+ /Dy 3+ -doped SrSi2O2N2 system and BaSiO3:Eu 2+ were designed and exhibited its application in information storage [8][9][10][11]. However, the lack of suitable red-emitting luminescence material is the bottleneck for full-color anti-counterfeiting optical information storage technology owing to the requirement of three primary colors (RGB) [12,13].…”
Section: Introductionmentioning
confidence: 99%