Study of optical properties of GaAsN layers prepared by molecular beam epitaxy

Pulzara-Mora, A.; Cruz‐Hernández, E.; Rojas-Ramírez, J. S.; Contreras-Guerrero, R.; Meléndez‐Lira, M.; Falcony, C.; Aguilar-Frutis, M.; López‐López, M.

doi:10.1016/j.jcrysgro.2006.11.241

Cited by 10 publications

(4 citation statements)

References 11 publications

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“…Under suitable growth conditions, we achieved the formation of a GaAs nano grooved surface with a high degree of lateral periodicity. 7) The lateral periodicity of the nanoscale step arrays and the step height are about 60 and 1.5 nm, respectively, and are oriented along the ½ " 113 direction, as observed in Fig. 1(a).…”

Section: Resultsmentioning

confidence: 81%

Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631)

Méndez-García¹,

García-Liñán²,

López‐Luna³

et al. 2011

Jpn. J. Appl. Phys.

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We studied the optical properties of self-assembled InAs nanostructures grown by molecular beam epitaxy on GaAs substrates with (631) crystallographic orientation by photoluminescence (PL) spectroscopy. The growth of InAs proceeded on GaAs(631) buffer layers conformed by corrugated surfaces with a high degree of lateral periodicity (uniformly spaced nano grooves). The grooved surface is sustained even after the growth of InAs with thicknesses below 2 monolayers (ML), indicating the formation of InAs quantum wires. The one-dimensional confinement is corroborated by PL polarized along the [113] and [8,19,9] orthogonal directions. The calculated polarization degree, Πd, was 0.13 and 0.125 for InAs thicknesses of 1 and 1.5 ML, respectively. As the InAs thickness is increased, the InAs film reaches the critical thickness and quantum dots aligned along the grooved surface are formed, as observed by atomic force microscopy. Excitation-power-dependent luminescence is observed to a larger extent for low-energy PL lines in addition to a blue shift related to the band-filling effect.

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Section: Resultsmentioning

confidence: 81%

Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631)

Méndez-García¹,

García-Liñán²,

López‐Luna³

et al. 2011

Jpn. J. Appl. Phys.

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“…This temperature was employed in order to incorporate a low nitrogen content into the InAs SAQDs [A. Pulzara-Mora et al, 2007]. The RHEED intensity variation of the transmission spot for sample M4 (Fig.…”

Section: Rheed Patternmentioning

confidence: 99%

State-of-the-Art of Quantum Dot System Fabrications

Al‐Ahmadi¹

2012

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Quantum dots are one of the most promising types of nanoparticles, which are exceptionally useful for variety of new applications because of their unique properties. This is a collaborative book sharing and providing the academic community with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems. We are most grateful to all authors of the chapters for highlighting the important issue of the potential applications of quantum dot system with a high quality work of their research. We are especially thankful for the cooperation and support from InTech team who helped in publishing this book, in particular the publishing process manager of this book, Ms. Molly Kaliman for her hard effort and patience during the process of publishing the book.

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“…In previous works, spectroscopic ellipsometry (SE) was used for the GaAsN material to investigate the nitrogen effect on GaAs host matrix [10], [11]. Very recently, Pulzara-Mora et al [12] studied the growth temperature (from 420 to 600 • C) effect of GaAsN on GaAs substrate by photoreflectance (PR) spectroscopy and phase modulated ellipsometry (PME), and established the corresponding growth mode. In a previous work [12], we have reported results relative to RTA effect on the GaAs 1−x N x : the accurate optical constants, and the decrease of the E 1 transition energy nitrogen dependence.…”

Section: Introductionmentioning

confidence: 99%

“…Very recently, Pulzara-Mora et al [12] studied the growth temperature (from 420 to 600 • C) effect of GaAsN on GaAs substrate by photoreflectance (PR) spectroscopy and phase modulated ellipsometry (PME), and established the corresponding growth mode. In a previous work [12], we have reported results relative to RTA effect on the GaAs 1−x N x : the accurate optical constants, and the decrease of the E 1 transition energy nitrogen dependence. In this work, we study the rapid thermal annealing effect using room temperature spectroscopic ellipsometry technique on GaAs 1−x N x (x = 0.1%, 0.5% and 1.5%) layers grown by molecular beam epitaxy (MBE) on GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1−x−Nx

Sedrine,

Rihani,

Harmand

et al. 2009

JTIT

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We report on the effect of rapid thermal annealing (RTA) on GaAs1−x−Nx layers, grown by molecular beam epitaxy (MBE), using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on a set of GaAs1−x−Nx as-grown and the RTA samples with small nitrogen content (x = 0.1%, 0.5% and 1.5%). Thanks to the standard critical point model parameterization of the GaAs1−x−Nx extracted dielectric functions, we have determined the RTA effect, and its nitrogen dependence. We have found that RTA affects more samples with high nitrogen content. In addition, RTA is found to decrease the E1 energy nitrogen blueshift and increase the broadening parameters of E1, E1+Δ1, E′0 and E2 critical points.

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Study of optical properties of GaAsN layers prepared by molecular beam epitaxy

Cited by 10 publications

References 11 publications

Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631)

Polarization and Excitation Dependence of Photoluminescence of InAs Quantum Wires and Dots Grown on GaAs(631)

State-of-the-Art of Quantum Dot System Fabrications

Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1−x−Nx

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