Study of optical and electrical assessments of the quaternary MgZnSnO system containing different Mg content

Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

“…The decay in the current is due to the photogenerated charge carriers backed to their original state. This behavior confirms the photoconducting behavior of the prepared diodes [33][34][35][36][37].…”

“…The capacitance is suddenly increased with the illumination and then, it come back to its initial value. The decrease in capacitance is due to interface charge carriers come back to its initial value, i.e, the charges are trapped into deep levels or due to the traps at deep levels above the valence band [33,34]. with the higher voltages.…”

“…The m values determining the photoconducting mechanism for the diodes having 0.5, 1.0, and 1.5% Cu 2 O contents were found to be about 0.90, 0.69 and 0.63, respectively. The m values are between 0.5 suggests that the photoconducting mechanism of the diodes are controlled by the presence of continuous distribution of trap levels[31][32][33][34].…”

Cu2ZnSnS4:graphene oxide nanocomposites based photoresponse devices

“…6 shows plot of I ph vs. P for the diode having 0.4 GO content at À3 V. The m value for the diode having 0.4 GO content was found to be about 1.17. The m value can take the values between 0.5 and 1, suggesting that the photoconducting mechanism of the diode is based on the presence of continuous distribution of trap levels [27,28]. The obtained m value of 1.17 suggests a linear dependence of photoconductivity on intensity (m ¼ 1.17) suggesting that the photoconduction mechanism is mononuclear recombination.…”

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

“…2(a) and (b), the reverse current decreses with the increasing GO content from 2 to 6%. This might be attributed to reduction of carrier concentration caused by the addition of GO charge carrier [22][23][24][25].…”