Study of One Dimension Thickness Scaling on Cu/HfOx/Pt Based RRAM Device Performance

Exploring the Physical Properties Related to Resistive Switching Events in HfO2-Based RRAM Devices with an Analytical Framework

“…At the filament center, the maximum local temperature T max = 729 K is measured with V a = 0.6 V and r f = 5 nm. The obtained T max , above the critical temperature T Crit = 600 K for the HfO 2 RRAM device, is adequate to contribute to resistive switching Figure (a) illustrates the complete voltage sweep as a function of time, whereas Figure (b) demonstrates the calculated local temperature on a time scale, with a maximum local temperature of 729 K in the positive bias domain and 400 K in the negative bias domain, consistent with the reported work …”

“…In this section, the analytically calculated resistive switching event from the device model is compared with the power signature calculated from experimental data, illustrated in Figure . The conductivity of the filament remains constant throughout the SET switching (HRS → LRS), while the filament radius varies . On the other hand, the filament conductivity varies while the radius remains constant during RESET switching (LRS → HRS) .…”

“…The solution of eq is given in eq and produces a parabolic temperature profile T ( z ) with the maximum temperature ( T max ) in the middle of the filament (at z = 0), which is calculated from the finite element method (FEM) simulation. Here, the COMSOL simulator estimates the local temperature and temperature distribution across the device by solving heat and electrostatic equations. , Figure (a) and (b) depict the temperature and electric field profile. Figure (c) indicates the local temperature distribution across the TE–oxide layer–BE direction inside the MIM stack.…”

“…Here, the COMSOL simulator estimates the local temperature and temperature distribution across the device by solving heat and electrostatic equations. 20,51 is measured with V a = 0.6 V and r f = 5 nm. The obtained T max , above the critical temperature T Crit = 600 K for the HfO 2 RRAM device, is adequate to contribute to resistive switching.…”

Investigation of Set/Reset Operations in CMOS-Logic-Compatible Contact Backfilled RRAMs

“…However, as the final transition metal oxide (TMO) thickness in CRRAM is controlled via selective etching during contact hole formation, CRRAM is subject to a large variation effect during mass production [35][36]. It is well known that the TMO thickness is one of the key parameters in an RRAM device that critically affects the basic resistive switching characteristics such as the set/reset time, operating voltage1, and low/high resistance states [37][38][39][40]. CRRAM reported in previous studies [33][34] was subject to nonuniformity in TMO thicknesses across an array To better control the overall TMO thickness in RRAM devices and improve the yield rate of RRAM characteristics by previous fabrication process, in this study, a new process flow of forming a TMO film by backfilling SiO 2 with plasma-…”