Study of Nickel Silicide Formation and Associated Fill-Factor Loss Analysis for Silicon Solar Cells With Plated Ni-Cu Based Metallization

Raval, Mehul C.; Joshi, Amruta; Saseendran, Sandeep S.; Suckow, Stephan; Saravanan, S.; Solanki, Chetan Singh; Kottantharayil, Anil

doi:10.1109/jphotov.2015.2463741

Cited by 12 publications

(6 citation statements)

References 41 publications

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“…Therefore research was focused on implementation of a diffusion barrier between the copper and the III-V solar cell. Both Ti [20], [21] and Ni [22]- [28] have been proposed as barrier materials for silicon solar cells with Cu contacts. As both Ti and Ni can be easily applied with e-beam evaporation, have a reasonable electrical conductivity and have a decent adhesion with Au, Cu and GaAs, it is interesting to test their diffusion barrier performance for GaAs solar cells as well.…”

Section: Introductionmentioning

confidence: 99%

Suitability of Ti and Ni as diffusion barriers for III-V space solar cells

Leest¹,

Bauhuis²,

Mulder³

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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Experiments were performed in order to explore the potential of Ti and Ni as Cu diffusion barriers for III-V solar cells. Accelerated life testing with solar cells with 10 or 100nm thick Ti and Ni barriers at 300 • C indicates that 10nm thick barriers show a better performance compared to 100nm thick barriers, but further experiments at a lower temperature are required to validate this conclusion. Accelerated life testing at 250 • C with solar cells with various front contacts containing a Ti or Ni barrier shows that cells with Au/Ti/Cu, Ni/Cu and Au/Ni/Cu have a performance better than cells with Au/Cu contacts. The Au/Ti/Cu contact scheme appears to be most promising as cells with this contact scheme show degradation behaviour similar to that of cells with plain Au contacts.

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Section: Introductionmentioning

confidence: 99%

Suitability of Ti and Ni as diffusion barriers for III-V space solar cells

Leest¹,

Bauhuis²,

Mulder³

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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“…Solar cells produce electricity through the photoelectric effect, where sunlight generates electricity in certain materials by decomposing their external electrons. Mono-crystalline solar cells have played an effective and significant role in the technology of manufacturing silicon solar cells [5] due to their simplicity and advanced technology [6]. Many researchers in the field of manufacturing photovoltaic cells have conducted many researches and studies that improve the manufacturing process at a low cost, and higher efficiency [7][8] .…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Comparison Between the Experimental and Simulated characteristics of the Mono-Crystalline Silicon Solar Cell Using SCAPS-1D

Ali

Zahran²,

Diab

2023

SVU-International Journal of Engineering Sciences and Applicati

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In this paper, a potassium hydroxide solution was used to etch the surface of the mono-crystalline silicon wafer, the sample was prepared at 0.33 Mol, solution temperature 82° C,14 min etching time and by adding 1% of additive texturing material to KOH solution gives more homogeneity, the scanning electron microscope (SEM) indicated that. Moreover, a result using (scaps-1d) software has been presented to compare the experimental and simulated characteristics of the mono-crystalline silicon solar cell. Simulations were performed on silicon-based "p-n" solar cells. Moreover, a comparison between the simulated results and the experimental of the mono-crystalline silicon solar cell using scaps-1d has been presented. It can be concluded that the experimental and simulated values are in great agreement. The experimental results are I sc = 8.763A, V oc = 0.629 V, fill factor = 81.21%, and efficiency = 18.5%, while the simulation results are I sc = 8.729A, V oc = 0.627 V, fill factor = 83.16% and efficiency = 18.72%. When comparing the results obtained in the laboratory with the results extracted from the SCAPS-1D program, a great agreement has been found.

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“…Among these phases, NiSi has the lowest resistivity and therefore is the preferred phase for contact formation. 18 NiSi is usually formed using a two-step annealing process, which 22 current−voltage measurements, 23,24 and photoluminescence imaging. 25−27 The results from some of these studies that use solution-based Ni deposition are contradictory.…”

Section: Introductionmentioning

confidence: 99%

“…The effectiveness of Ni and NiSi layers as Cu diffusion barriers in c -Si solar cells has been studied using techniques such as suns-open circuit voltage, current–voltage measurements, , and photoluminescence imaging. − The results from some of these studies that use solution-based Ni deposition are contradictory. While Bartsch et al have shown that the Ni is an effective barrier for Cu, Flynn et al have shown that Cu readily diffuses through the Ni layer and forms Cu 3 Si precipitates .…”

Section: Introductionmentioning

confidence: 99%

Thermal Stability of Copper–Nickel and Copper–Nickel Silicide Contacts for Crystalline Silicon

Kale

Nemeth

Perkins

et al. 2018

ACS Appl. Energy Mater.

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Copper is a low-cost, low-damage alternative to Ag paste for front-side metallization of crystalline Si (c-Si) solar cells, but requires conductive diffusion barriers like Ni or NiSi. Thermal stability of these barriers during postmetallization anneal is critical for performance. In this study, we address the structural and chemical stability of Cu contacts with both Ni and NiSi barrier layers, identifying interfacial reactions responsible for their degradation. Superior thermal and chemical stability of single-phase NiSi barrier as compared to Ni is made evident by XRD, Auger, and Raman spectroscopies. Moreover, the commonly used Cu− Ni−Si contact stack does not convert to more stable Cu−NiSi−Si stack upon thermal treatment. Instead, Cu readily alloys with the Ni layer and reacts with the underlying c-Si to form Cu 3 Si, with no evidence for the formation of Ni x Si phases. Also, even the superior NiSi barrier slowly dissolves into Cu at elevated temperatures.

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Study of Nickel Silicide Formation and Associated Fill-Factor Loss Analysis for Silicon Solar Cells With Plated Ni-Cu Based Metallization

Cited by 12 publications

References 41 publications

Suitability of Ti and Ni as diffusion barriers for III-V space solar cells

Suitability of Ti and Ni as diffusion barriers for III-V space solar cells

Comprehensive Comparison Between the Experimental and Simulated characteristics of the Mono-Crystalline Silicon Solar Cell Using SCAPS-1D

Thermal Stability of Copper–Nickel and Copper–Nickel Silicide Contacts for Crystalline Silicon

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