Study of narrow and intense UV electroluminescence from ITO/SRO/Si-p and ITO/SRN/SRO/Si-p based light emitting capacitors

Cabañas-Tay, S.A.; Palacios-Huerta, L.; Aceves-Mijares, M.; Coyopol, A.; Morales-Morales, F.; Pérez‐García, Sergio Alfonso; Licea‐Jiménez, Liliana; Domínguez-Horna, C.; Leyva, Karim Monfil; Morales-Sánchez, A.

doi:10.1016/j.jlumin.2016.11.043

Cited by 7 publications

(1 citation statement)

References 51 publications

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“…A diffusion of N, Si and O atoms towards the SRN/SRO interface was also observed due to the thermal annealing forming an oxynitride layer (SiON) with gradually increasing contents of the different elements. Similar results were reported in the literature for the formation of SiON at the interface of an SRN/SRO bilayer [ 37 ].…”

Section: Resultssupporting

confidence: 91%

Effect of the Graded Silicon Content in SRN/SRO Multilayer Structures on the Si Nanocrystals and Si Nanopyramids Formation and Their Photoluminescence Response

et al. 2021

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Two multilayer (ML) structures, composed of five layers of silicon-rich oxide (SRO) with different Si contents and a sixth layer of silicon-rich nitride (SRN), were deposited by low pressure chemical vapor deposition. These SRN/SRO MLs were thermally annealed at 1100 °C for 180 min in ambient N2 to induce the formation of Si nanostructures. For the first ML structure (MLA), the excess Si in each SRO layer was about 10.7 ± 0.6, 9.1 ± 0.4, 8.0 ± 0.2, 9.1 ± 0.3 and 9.7 ± 0.4 at.%, respectively. For the second ML structure (MLB), the excess Si was about 8.3 ± 0.2, 10.8 ± 0.4, 13.6 ± 1.2, 9.8 ± 0.4 and 8.7 ± 0.1 at.%, respectively. Si nanopyramids (Si-NPs) were formed in the SRO/Si substrate interface when the SRO layer with the highest excess silicon (10.7 at.%) was deposited next to the MLA substrate. The height, base and density of the Si-NPs was about 2–8 nm, 8–26 nm and ~6 × 1011 cm−2, respectively. In addition, Si nanocrystals (Si-ncs) with a mean size of between 3.95 ± 0.20 nm and 2.86 ± 0.81 nm were observed for the subsequent SRO layers. Meanwhile, Si-NPs were not observed when the excess Si in the SRO film next to the Si-substrate decreased to 8.3 ± 0.2 at.% (MLB), indicating that there existed a specific amount of excess Si for their formation. Si-ncs with mean size of 2.87 ± 0.73 nm and 3.72 ± 1.03 nm were observed for MLB, depending on the amount of excess Si in the SRO film. An enhanced photoluminescence (PL) emission (eight-fold more) was observed in MLA as compared to MLB due to the presence of the Si-NPs. Therefore, the influence of graded silicon content in SRN/SRO multilayer structures on the formation of Si-NPs and Si-ncs, and their relation to the PL emission, was analyzed.

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Section: Resultssupporting

confidence: 91%