Study of n-type doping in germanium by temperature based PF+ implantation

Liu, Jinbiao; Wang, Guilei; Li, Junfeng; Kong, Zhenzhen; Radamson, Henry H.

doi:10.1007/s10854-019-02522-3

Cited by 5 publications

(3 citation statements)

References 23 publications

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“…Except for the requirement of conformality, parasitic resistance is another challenge that needs to be addressed. As the critical dimension of devices decreases, the contact area decreases accordingly, and it is necessary to achieve a higher dopant activation level in S/D to lower the contact resistivity [214,[219][220][221][222][223]. At present, the S/D of PMOS are p-type doped SiGe epitaxial films where the doping procedure is accomplished by boron in situ doping or implantation.…”

Section: Solid-state Diffusionmentioning

confidence: 99%

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Radamson,

Miao,

Zhou

et al. 2024

Nanomaterials

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After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D transistors in the form of gate-all-around (GAA) transistors are being considered as an excellent solution to scaling down beyond the 5 nm technology node, which solves the difficulties of carrier transport in the channel region which are mainly rooted in short channel effects (SCEs). In parallel to Moore, during the last two decades, transistors with a fully depleted SOI (FDSOI) design have also been processed for low-power electronics. Among all the possible designs, there are also tunneling field-effect transistors (TFETs), which offer very low power consumption and decent electrical characteristics. This review article presents new transistor designs, along with the integration of electronics and photonics, simulation methods, and continuation of CMOS process technology to the 5 nm technology node and beyond. The content highlights the innovative methods, challenges, and difficulties in device processing and design, as well as how to apply suitable metrology techniques as a tool to find out the imperfections and lattice distortions, strain status, and composition in the device structures.

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Section: Solid-state Diffusionmentioning

confidence: 99%

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Radamson,

Miao,

Zhou

et al. 2024

Nanomaterials

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“…Many elements, such as carbon (C), nitrogen (N), and fluorine (F), have proved to be alternative co-doping ions to suppress dopant diffusion in the post-annealing process. [15][16][17] Among those elements, theoretical and experimental studies [13,[18][19][20][21][22] show that F owns a large electro-negativity and has been confirmed to be one of the best options because of its higher bonding energy with vacancy to form F n V m clusters than n-type dopants.…”

Section: Introductionmentioning

confidence: 99%

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

Chen¹,

Weihang²,

Yu³

et al. 2022

Chinese Phys. B

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The diffusion and activation of phosphorus in phosphorus and fluorine co-implanted Ge after excimer laser annealing was investigated firstly. The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation. Moreover, the rapid thermal annealing process had been also utilized to evaluate and verify the role of fluorine element. During the initial annealing of co-implanted Ge, it was easier to form high bonding energy FnVm clusters which could stabilize the excess vacancies resulting in the reduced vacancy-assisted diffusion of phosphorus. The maximum activation concentration of about 4.4×1020 /cm3 with a reduced diffusion length and dopant loss was achieved in co-implanted Ge that was annealed at a tailored laser fluence of 175 mJ/cm2. The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its application in the scaled Ge MOSFET technology and other devices.

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“…Nevertheless, in most reported cases, it was difficult to avoid the volatilization or dissipation of F into atmosphere during high temperature annealing in traditional thermal treatment, which unfortunately hinders its practical application. [11][12][13] Recently, it was confirmed that a large portion of F can be maintained in the substrate using ns laser annealing (NLA), and the activation can be improved as well by employing NLA. 14 In this work, N-type doping of Ge was investigated using NLA to form a highly activated shallow junction.…”

mentioning

confidence: 99%

Formation of Highly-Activated N-Type Shallow Junction in Germanium Using Nanosecond Laser Annealing and Fluorine Co-Doping

Liu¹,

Xu²,

Cui³

et al. 2023

ECS J. Solid State Sci. Technol.

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By employing a 355 nm nanosecond ultraviolet laser annealing, the impact of fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in germanium (Ge) was investigated. Secondary ion mass spectrometry depth profiling of phosphorus (P) demonstrated that an ultra high P concentration of 9e20/cm3 at a shallow junction of 55 nm with less dopant diffusion can be obtained using ns laser annealing. F co-doping was confirmed to be an efficient way to improve the activation of the P dopants, but show less influence on the redistribution of P dopants within the NLA melted region. However, the activation level of the shallow junction could be increased to approximately 1e20/cm3 in the presence of F at an optimized concentration.

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Study of n-type doping in germanium by temperature based PF+ implantation

Cited by 5 publications

References 23 publications

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

Formation of Highly-Activated N-Type Shallow Junction in Germanium Using Nanosecond Laser Annealing and Fluorine Co-Doping

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