Journal of Alloys and Compounds
 2015
DOI: 10.1016/j.jallcom.2015.07.267
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Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures

Tao Lin
1
,
Haoqing Zhang
2
,
Enmin Guo
3
et al.
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Cited by 7 publications
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References 20 publications
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Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

Xie
1
,
Lin
2
,
Wang
3
et al. 2023
Appl. Phys. B
2
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Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

Xie
1
,
Lin
2
,
Wang
3
et al. 2023
Appl. Phys. B
2
0
0
0
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Study of 589nm GaInP quantum well semiconductor laser on Ge/SiGe substrate

Xie,
Lin,
Wang
et al. 2024
Appl. Phys. B
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Composition and Interface Research on Quantum Well Intermixing Between a Tensile GaInP Quantum Well and Compressed AlGaInP Barriers

Lin
1
,
Li
2
,
Xie
3
et al. 2022
J. Electron. Mater.
2
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