Study of multimode semiconductor lasers with buried mesas

Shamakhov, V. V.; Nikolaev, D. N.; Golovin, V. S.; Veselov, D. A.; Сліпченко, С. О.; Pikhtin, N. A.

doi:10.1070/qel17135

Cited by 1 publication

(1 citation statement)

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“…Using SAE, one can significantly modify the active region of semiconductor lasers and, thus, fabricate multi-wavelength single-mode laser arrays [ 17 , 30 ], monolithic semiconductor sources of fs laser pulses [ 31 ], and tunable semiconductor lasers with an ultra-wide tuning range [ 15 ]. Moreover, the ability of SAE to realize new designs of high-power semiconductor lasers that require the formation of lateral waveguide and a spatially configured active region [ 32 ] should be emphasized.…”

Section: Introductionmentioning

confidence: 99%

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

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Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

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