2015
DOI: 10.1109/ted.2015.2445339
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Study of Multilevel High-Resistance States in HfO<sub><italic>x</italic></sub>-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Abstract: Multilevel high-resistance states are achieved in TiN/HfO x /Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components R s , R, and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap betwee… Show more

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Cited by 11 publications
(5 citation statements)
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“…In Au/NiO/ITO devices, the larger capacitance in LRS compared to HRS is consistent with that of previous reports. 36,38,[40][41][42][43][44] The first explanation could be based on the gap between the conductive filaments and one of the electrodes. 38,41) The capacitance can be expressed as…”
Section: Memristive Switching Characteristicsmentioning
confidence: 99%
See 1 more Smart Citation
“…In Au/NiO/ITO devices, the larger capacitance in LRS compared to HRS is consistent with that of previous reports. 36,38,[40][41][42][43][44] The first explanation could be based on the gap between the conductive filaments and one of the electrodes. 38,41) The capacitance can be expressed as…”
Section: Memristive Switching Characteristicsmentioning
confidence: 99%
“…36,38,[40][41][42][43][44] The first explanation could be based on the gap between the conductive filaments and one of the electrodes. 38,41) The capacitance can be expressed as…”
Section: Memristive Switching Characteristicsmentioning
confidence: 99%
“…In addition, multi-level cell (MLC) operation is also very important for high-density data storage RRAM application. There are few reports on MLC operation by using Pt/Ta 2 O 5 /TiN 19 , Ta/TaO x /Pt 20 , TiN/HfO x /Pt 21 , Pt/HfO 2 /TiO 2 /ITO 22 and TiN/Ti/TiO 2−x /Pt NC/TiO 2−x /Au 23 structures. Further, the switching mechanism is not explored clearly.…”
Section: Introductionmentioning
confidence: 99%
“…However, both of the techniques cannot solve the scalability problem as the Flash memory. Nowadays, resistive switching random access memory (RRAM) has attracted much attention due to its simple structure, low-power consumption, high read/write speed, good reliability, and great scalability [69].…”
Section: Introduction To Resistive Switching Random Access Memorymentioning
confidence: 99%