Study of Multilevel High-Resistance States in HfO&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Li, H. K.; Chen, T. P.; Hu, Shaogang; Liu, P.; Liu, Y.; Lee, Pooi See; Wang, X. P.; Li, H. Y.; Lo, Guo‐Qiang

doi:10.1109/ted.2015.2445339

Cited by 11 publications

(5 citation statements)

References 22 publications

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“…In Au/NiO/ITO devices, the larger capacitance in LRS compared to HRS is consistent with that of previous reports. 36,38,[40][41][42][43][44] The first explanation could be based on the gap between the conductive filaments and one of the electrodes. 38,41) The capacitance can be expressed as…”

Section: Memristive Switching Characteristicsmentioning

confidence: 99%

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Digital and analog resistive switching in NiO-based memristor by electrode engineering

Angappane

2022

Jpn. J. Appl. Phys.

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An electroforming-free bipolar resistive switching (RS) is demonstrated in NiO-based memristors with different RS types, digital and analog. Au/NiO/Pt devices show the digital RS with low operating voltages (0.6/-0.7 V), large ON/OFF ratio (10^2), longer retention (10^3 s), and hence, are suitable for low power memory applications. On the other hand, Au/NiO/ITO devices exhibit analog RS with a lower operating current (~µA), longer endurance (>10^2 cycles), and retention (10^3 s). Notably, one of the synaptic features, conductance modulation, is demonstrated in Au/NiO/ITO devices. The crystalline phases, microstructure, and defect density of sputtered NiO films depend on the nature of the bottom electrode, and thereby, the switching behavior can be tuned by electrode engineering. Unequivocally, the fabricated NiO-based memristors with multifunctional capability are found to be promising and pave the way for a new paradigm of fusion between information technology and bio-inspired computing.

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Section: Memristive Switching Characteristicsmentioning

confidence: 99%

“…36,38,[40][41][42][43][44] The first explanation could be based on the gap between the conductive filaments and one of the electrodes. 38,41) The capacitance can be expressed as…”

Section: Memristive Switching Characteristicsmentioning

confidence: 99%

Digital and analog resistive switching in NiO-based memristor by electrode engineering

Angappane

2022

Jpn. J. Appl. Phys.

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“…In addition, multi-level cell (MLC) operation is also very important for high-density data storage RRAM application. There are few reports on MLC operation by using Pt/Ta 2 O 5 /TiN 19 , Ta/TaO x /Pt 20 , TiN/HfO x /Pt 21 , Pt/HfO 2 /TiO 2 /ITO 22 and TiN/Ti/TiO 2−x /Pt NC/TiO 2−x /Au 23 structures. Further, the switching mechanism is not explored clearly.…”

Section: Introductionmentioning

confidence: 99%

Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection

Samanta

Rahaman

Roy

et al. 2017

Sci Rep

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Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2/sarcosine sensing (or changing Ge°/Ge4+ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge0/Ge4+ are confirmed by both XPS and H2O2 sensing of GeOx membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >106 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeOx layer is found to be increased to 12.5 nm with the reduction of polycrystalline grain size of <7 nm after P/E of 106 cycles, which is observed by high-resolution TEM. The switching mechanism is explored through redox reaction in GeOx membrane by sensing 1 nM H2O2, which is owing to the change of oxidation states from Ge0 to Ge4+ because of the enhanced O2− ions migration in memory device under external bias. In addition, sarcosine as a prostate cancer biomarker with low concentration of 50 pM to 10 µM is also detected.

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“…However, both of the techniques cannot solve the scalability problem as the Flash memory. Nowadays, resistive switching random access memory (RRAM) has attracted much attention due to its simple structure, low-power consumption, high read/write speed, good reliability, and great scalability [69].…”

Section: Introduction To Resistive Switching Random Access Memorymentioning

confidence: 99%

Device applications of transition metal oxide thin films

Li¹

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First and foremost, I would like to express my deepest gratitude to my supervisor, Associate Professor Chen Tupei, for his patient guidance, consistent support and encouragement throughout my Ph.D. journey in Nanyang Technological University. Without his inspiring ideas, invaluable discussions, and technical guidance, this thesis would not be completed. The rigorous attitude and enterprising spirit I learned from Prof. Chen benefit not only my study during the Ph.D. life, but also my future study and working. It is a great honor for me to be a Ph.D. student in Prof. Chen's group.

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Study of Multilevel High-Resistance States in HfO<sub><italic>x</italic></sub>-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Cited by 11 publications

References 22 publications

Digital and analog resistive switching in NiO-based memristor by electrode engineering

Digital and analog resistive switching in NiO-based memristor by electrode engineering

Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection

Device applications of transition metal oxide thin films

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