Study of microstructure of epitaxial fullerenes films

Optical and gas sensing studies of transparent ZnO thin film deposited from a new precursor by ultrasonic aerosol assisted chemical vapor deposition

“…The wide band gap in these films give high transmittance above 600 nm with an absorption edge around 372 nm as reported in literature [12]. The optical band gap of the film was calculated from the plot of hν (ev) vs (α t. hν) 2 (ev) 2 as shown in Figure 8, where t is thickness, hν is the energy of incident light and α is absorption coefficient.…”

“…Various techniques such as sputtering [8,9], chemical spray deposition [10], sol-gel [11] and electrochemical deposition [12] are available for the deposition of thin films. One of the techniques to deposit thin metal or metal oxide films is Aerosol Assisted Chemical Vapor Deposition (AACVD), which involves the generation of an aerosol using an ultrasonic generator.…”

Structural defects and epitaxial rotation of C60 and C70(111) films on GeS(001)

“…28 The GeS͑001͒ crystal seems particularly adequate for C 60 film growth with a lattice mismatch of about 0.9% 18 while C 70 is at its best on MoS 2 26 or mica. 31 Structural studies have shown crystalline defects of fullerenes films lifted from the mica͑001͒ [31][32][33] or MgO͑001͒ 34 substrate surface. However, lifting the films hinders the investigation of the role of the substrate.…”