Study of magnetization reversal and anisotropy of single crystalline ultrathin Fe/MgO (001) film by magneto-optic Kerr effect

Zhang, Miaoling; Ye, Jun; Li, Rui; Mi, Shu; Xie, Yong; Liu, Hao-Liang; Haesendonck, Chris Van; Chen, Zi-Yu

doi:10.1088/1674-1056/25/4/047503

Cited by 7 publications

(4 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5(c) ) the sudden increase of the MOKE intensity than the positive saturation one indicates presence of transverse component in the sample. As discussed earlier, this asymmetry (sudden increase) in the hysteresis loop arises due to the dominance of quadratic component of MOKE over the linear one 39 – 43 . It should be noted that the asymmetry present in the loop along ϕ = 45° (Fig.…”

Section: Resultsmentioning

confidence: 68%

See 1 more Smart Citation

Effect of magnetic fullerene on magnetization reversal created at the Fe/C60 interface

Mallik

Mattauch

Dalai

et al. 2018

Sci Rep

View full text Add to dashboard Cite

Probing the hybridized magnetic interface between organic semiconductor (OSC) and ferromagnetic (FM) layers has drawn significant attention in recent years because of their potential in spintronic applications. Recent studies demonstrate various aspects of organic spintronics such as magnetoresistance, induced interface moment etc. However, not much work has been performed to investigate the implications of such OSC/FM interfaces on the magnetization reversal and domain structure which are the utmost requirements for any applications. Here, we show that non-magnetic Fullerene can obtain non-negligible magnetic moment at the interface of Fe(15 nm)/C60(40 nm) bilayer. This leads to substantial effect on both the magnetic domain structure as well as the magnetization reversal when compared to a single layer of Fe(15 nm). This is corroborated by the polarized neutron reflectivity (PNR) data which indicates presence of hybridization at the interface by the reduction of magnetic moment in Fe. Afterwards, upto 1.9 nm of C60 near the interface exhibits magnetic moment. From the PNR measurements it was found that the magnetic C60 layer prefers to be aligned anti-parallel with the Fe layer at the remanant state. The later observation has been confirmed by domain imaging via magneto-optic Kerr microscopy.

show abstract

Section: Resultsmentioning

confidence: 68%

“…It has been reported in previous literature that this asymmetry in hysteresis loops in Fe samples occurs due to the quadratic component of the MOKE. Near the hard axis of the sample the quadratic component becomes dominant over the linear one of the MOKE which gives rise to sudden jumps in hysteresis loops 39 – 43 . Further in Fig.…”

Section: Resultsmentioning

confidence: 99%

Effect of magnetic fullerene on magnetization reversal created at the Fe/C60 interface

Mallik

Mattauch

Dalai

et al. 2018

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Different to the longitudinal Kerr signal that is characteristic of the light intensity related to the M component variation along the H direction, the transverse Kerr reflects the light intensity variation perpendicular to the H direction. Since the transverse M component is close to zero at positive or negative saturated H [28], the Kerr signal intensity and the magnetic domain image contrast are almost equal in figures 4(c) and (d) (state 1 and 6). Similarly, during increasing H from −101.6 Oe to 101.6 Oe, M first rotates coherently to be orientated with the easy axis [010] direction (stage 2).…”

Section: Resultsmentioning

confidence: 91%

Observing the magnetization reversal processes and anisotropic effective damping of epitaxial FeSi/MgO (001)

Guo¹,

Jin²,

Lu³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Epitaxial FeSi film on MgO (001) substrate was fabricated via a radio frequency magnetron sputtering technology. The epitaxial relationship of FeSi(001)/[110]//MgO(001)/[100] was characterized by crystal structure measurements and confirmed by in-plane biaxial magnetic anisotropy through vibrating sample magnetometer (VSM). By measuring Kerr magnetic hysteresis loops and recording the real-time magnetic domain images through surface magneto-optic Kerr effect (MOKE), two successive 90° domain wall displacement along easy axis and two discontinuous 90° domain wall displacement along hard axis were directly observed. Meanwhile, the difference of magnetic hysteresis loops obtained by VSM and MOKE devices were discussed. Furthermore, from the results of magnetic field sweeping ferromagnetic resonance measurements, it was found that FeSi film possesses an anisotropic effective damping constant of 0.0042 for easy axis direction and 0.0053 for hard axis direction, which was ascribed to the crystallographic defects induced two magnon scattering contributions.

show abstract

“…There is also a noticeable 6th order contribution Hk 6 ( Table 4 ) along with the cubic Hk 4 (4th order) symmetry axis [ 52 , 55 , 56 ]. For example, for lines presented on Figure 12 b we found that Hk 6 is greater than Hk 4 .…”

Section: Resultsmentioning

confidence: 99%

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1−x/Ge/Fe3+xSi1−x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

et al. 2021

View full text Add to dashboard Cite

Three-layer iron-rich Fe3+xSi1−x/Ge/Fe3+xSi1−x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1−x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1−x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1−x. The average lattice distortion and residual stress of the upper Fe3+xSi1−x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of −0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1−x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1−x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1−x, which implies the epitaxial orientation relationship of Fe3+xSi1−x (111)[0−11] || Ge(111)[1−10] || Fe3+xSi1−x (111)[0−11] || Si(111)[1−10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

show abstract

Study of magnetization reversal and anisotropy of single crystalline ultrathin Fe/MgO (001) film by magneto-optic Kerr effect

Cited by 7 publications

References 28 publications

Effect of magnetic fullerene on magnetization reversal created at the Fe/C60 interface

Effect of magnetic fullerene on magnetization reversal created at the Fe/C60 interface

Observing the magnetization reversal processes and anisotropic effective damping of epitaxial FeSi/MgO (001)

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1−x/Ge/Fe3+xSi1−x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

Contact Info

Product

Resources

About