2000
DOI: 10.1016/s0924-4247(99)00299-x
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Study of low-temperature direct bonding of (111) and (100) silicon wafers under various ambient and surface conditions

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Cited by 19 publications
(15 citation statements)
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“…The presence of any dielectric layer (SiO 2 ) on the silicon substrate may require a higher applied voltage. 93 Glass/glass anodic bonding can also be carried out using Ti (80 nm thick) as a metallic intermediate layer. 94 The bonding connections reported for this work were a temperature of 530 C and an applied voltage of 100 V; Corning 0021 microscope slides were used.…”
Section: Anodic Bondingmentioning
confidence: 99%
“…The presence of any dielectric layer (SiO 2 ) on the silicon substrate may require a higher applied voltage. 93 Glass/glass anodic bonding can also be carried out using Ti (80 nm thick) as a metallic intermediate layer. 94 The bonding connections reported for this work were a temperature of 530 C and an applied voltage of 100 V; Corning 0021 microscope slides were used.…”
Section: Anodic Bondingmentioning
confidence: 99%
“…Then, after substituting (16) into (14), we have (19) In a heated vacuum chamber, the water concentration is extremely low, i.e., and ; hence, we have the boundary conditions as follows:…”
Section: B Development Of Diffusion Modelmentioning
confidence: 99%
“…Now, let us look back at (16). The value of the constant " " can be determined by treating it as a fitting parameter of (19) when comparing its computation results with the experimental data. The experimental data for bonding at various temperatures annealed for four hours are used for the comparison.…”
Section: Determination Of Parameters' Valuesmentioning
confidence: 99%
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