Study of Low Resistivity and High Work Function ITO Films Prepared by Oxygen Flow Rates and N&lt;SUB&gt;2&lt;/SUB&gt;O Plasma Treatment for Amorphous/Crystalline Silicon Heterojunction Solar Cells

Hussain, Shahzada Qamar; Oh, Woong-Kyo; Kim, Sunbo; Ahn, Shihyun; Le, Anh Huy Tuan; Park, Hyeongsik; Lee, Youngseok; Dao, Vinh Ai; Velumani, S.; Yi, Junsin

doi:10.1166/jnn.2014.10142

Cited by 12 publications

(4 citation statements)

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“…The sheet resistance of ITO films gradually decreased from 54 to 26.82 Ω/sq as the working pressure was increased from 0.96 to 0.99 mTorr. The decrease in resistivity of the ITO films is related to the combined influence of the Hall mobility and carrier concentration [14][15][16]. The maximum value of the Hall mobility of ITO films was recorded as 46.89 (cm 2 /V.s) for the working pressure of 0.99 mTorr.…”

Section: Resultsmentioning

confidence: 95%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10 -4 Ω·cm, high hall mobility of 46.89 cm 2 /V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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Section: Resultsmentioning

confidence: 95%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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“…In addition, the interfacial electric field can reduce the work function of ITO, which would favor light‐generated electron extraction. [ 34,35 ] To further explore the ITO work function versus device performance, a simulated work was conducted. As shown in Figure S9, Supporting Information, the calculated results indicate that the performance of devices improved with a decreased work function of the front ITO.…”

Section: Resultsmentioning

confidence: 99%

Polarizable High‐Index Nanoparticles Used for Light‐Induced Crystal‐Silicon Passivation and Dielectric Antenna for High‐Efficiency Solar Cell

et al. 2021

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Heterojunction crystal‐silicon (c‐Si) solar cells generate current from harvesting light via sweeping excited carriers away under built‐in asymmetry through amorphous silicon layers. However, loss of energy beyond the bandgap is known to hinder their efficiency. Herein, a strategy is provided to convert short‐wavelength energy into a polarization electrical field and the light dielectric antenna effect, where enhanced surface passivation and carrier collection occur simultaneously. By depositing an ultrathin polarizable nanoparticle layer on a transparent conducting oxide (TCO), a light‐induced electrical field is built up by light‐harvesting accumulation, which benefits for c‐Si surface passivation. An enchanting open‐circuit voltage (Voc) of 736.6 mV for the light‐induced field‐effect solar cell is achieved. In addition, the high‐index dielectric nanoparticles generate more photons to be absorbed in the long‐wavelength in c‐Si solar cells, which results in enhanced short‐circuit current (Jsc). As a result, benefiting from the light‐induced building‐up extra field and dielectric antenna effect, the device yields a power conversion efficiency of 22.41%, with the maximal improvement of Voc (≈4 mV), Jsc (≈0.4 mA cm−2), and fill factor (≈1%), respectively. This work provides a strategy to enhance solar cell efficiency by continuously harvesting beyond‐bandgap light to offer an additional asymmetrical field and the light antenna effect.

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“…The highest cell parameters in this report are Jsc = 34.79 mA·cm−2, Voc = 714 mV and η = 17.82. However, the device performance is reduced when [Oi] concentration exceeds the limit from 3.2 × 10 20 cm −3 [ 91 ]. One of the most important facts of the work function of TCO thin layers creates the band bending effect in TCO/a-Si:H(p) interface [ 92 ].…”

Section: Current Challenges and Future Outlookmentioning

confidence: 99%

“…Additionally, graphene material has huge potential for the development of TCO materials because of its excellent light transmittance and high electrical conductivity [ 88 ]. Table 2 provides a list of TCO films and deposition techniques with the films’ parameters, properties, and efficiency, respectively [ 31 , 32 , 33 , 34 , 36 , 38 , 53 , 78 , 91 , 93 , 94 , 95 , 97 , 98 ]. In terms of outlook, the development of high-performance and low-cost TCO materials is crucial for the commercialization of SHJ solar cells and other high-efficiency solar cell technologies.…”

Section: Current Challenges and Future Outlookmentioning

confidence: 99%

A Brief Review of Transparent Conducting Oxides (TCO): The Influence of Different Deposition Techniques on the Efficiency of Solar Cells

et al. 2023

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Global-warming-induced climate changes and socioeconomic issues increasingly stimulate reviews of renewable energy. Among energy-generation devices, solar cells are often considered as renewable sources of energy. Lately, transparent conducting oxides (TCOs) are playing a significant role as back/front contact electrodes in silicon heterojunction solar cells (SHJ SCs). In particular, the optimized Sn-doped In2O3 (ITO) has served as a capable TCO material to improve the efficiency of SHJ SCs, due to excellent physicochemical properties such as high transmittance, electrical conductivity, mobility, bandgap, and a low refractive index. The doped-ITO thin films had promising characteristics and helped in promoting the efficiency of SHJ SCs. Further, SHJ technology, together with an interdigitated back contact structure, achieved an outstanding efficiency of 26.7%. The present article discusses the deposition of TCO films by various techniques, parameters affecting TCO properties, characteristics of doped and undoped TCO materials, and their influence on SHJ SC efficiency, based on a review of ongoing research and development activities.

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Study of Low Resistivity and High Work Function ITO Films Prepared by Oxygen Flow Rates and N<SUB>2</SUB>O Plasma Treatment for Amorphous/Crystalline Silicon Heterojunction Solar Cells

Cited by 12 publications

References 0 publications

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Polarizable High‐Index Nanoparticles Used for Light‐Induced Crystal‐Silicon Passivation and Dielectric Antenna for High‐Efficiency Solar Cell

A Brief Review of Transparent Conducting Oxides (TCO): The Influence of Different Deposition Techniques on the Efficiency of Solar Cells

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