Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier

Inoue, Fumihiro; Yokoyama, Takumi; Tanaka, Shukichi; Yamamoto, Kousaku; Koyanagi, Mitsumasa; Fukushima, T.; Wang, Z.; Shingubara, Shoso

doi:10.1109/iitc.2009.5090376

Cited by 1 publication

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“…Electroless Ni and Co alloys have been studied as diffusion barriers against Cu in ULSI multilevel interconnections. [20][21][22][23][24][25] Electroless Ni-P was considered as a Cu barrier material, and we have achieved the formation of a conformal electroless Ni-P layer in TSVs with an Sn-Pd catalyst pretreatment. The asdeposited film existed as an amorphous phase with a superior barrier property because of the absence of the fast diffusion paths along the grain boundary.…”

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confidence: 99%

Electroless Ni alloy plating as a diffusion barrier for through silicon vias in three-dimensional packaging

Kim

Ahn

Lim

et al. 2015

Jpn. J. Appl. Phys.

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Ni- and Co-based amorphous films are alternative diffusion barrier materials for Cu interconnection in three-dimensional (3D) packaging applications. In this paper, electroless Ni–P and Ni–W–P films deposited in through-silicon vias (TSVs) were prepared as a diffusion barrier and seed layer of Cu filling by using Sn–Pd activation pretreatment. The thermal stability of the electroless Ni alloy films subjected to rapid thermal annealing (RTA) in H2 atmosphere was investigated. The barrier properties of the electroless Ni alloy films were evaluated over a range of temperatures using auger electron spectroscopy (AES) and energy dispersive X-ray spectroscopy (EDS) line-scan. The microstructures, crystal structures and electrical resistivity were also examined. It was found that Ni alloy films are amorphous as deposited, that the films retain amorphous or amorphous-like structures after undergoing annealing at 400 °C for 1 h, and that they are feasible for the diffusion barrier layer for 3D Cu interconnect technology.

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