Study of local lattice relaxation of substitutional impurities in silicon and germanium

Sasireka, D.; Palaniyandi, E.; Iyakutti, K.

doi:10.1002/qua.20102

Cited by 3 publications

(1 citation statement)

References 39 publications

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“…Previously, local lattice relaxation of substitutional Mg in Si has been theoretically investigated. 23 According to the theoretical prediction, 23 the Mg-Si bond distance ͑2.352 Å͒ is very similar to the Si-Si bond distance ͑2.350 Å͒, implying that the Mg impurity in Si hardly affects the lattice constant. It appears that the prediction is inconsistent with the present observation.…”

Section: B Epma Analysismentioning

confidence: 88%

Synthetic condition to generate magnesium-related acceptor levels in silicon

Matsumoto

Uenaka

Seto

et al. 2010

Journal of Applied Physics

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It has generally been recognized that Mg gives rise to an interstitial donor level in Si although the possibility of the existence of a Mg substitutional acceptor in Si has been suggested. In this work, we explore the synthetic conditions required to obtain substitutional Mg acceptor in Si. We have diffused Mg into Si wafers under the Mg vapor environment created by the thermal decomposition of MgB 2. The Mg vapor pressure is low enough to suppress the formation of the stable silicide phase, Mg 2 Si, but is high enough to induce Mg diffusion into Si. The resultant Mg-diffused Si exhibited degenerate p-type semiconducting behavior. It was proposed that the presence/absence of the Mg 2 Si phase plays a key role in determining the location and solubility of Mg in Si.

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Section: B Epma Analysismentioning

confidence: 88%