Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

Garayt, Jean Philippe; Gérard, Jean‐Michel; Enjalbert, F.; Ferlazzo, L.; Founta, S.; Martinez-Guerrero, E.; Rol, Fabian; Araújo, D.; Cox, R.T.; Daudin, B.; Gayral, B.; Dang, Le Si; Mariette, H.

doi:10.1016/j.physe.2004.08.053

Cited by 39 publications

(21 citation statements)

References 15 publications

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“…One possibility to refine our understanding of such structures (such as the coupling to the phonons, the multiparticle states, the behavior as a function of excitation power) is to study single quantum dots [1]. Single GaN dot cathodoluminescence spectroscopy was reported for (0001) QDs [2] as well as for cubic phase QDs [3]. Single dot photoluminescence spectroscopy was reported for GaN quantum dots grown along the [0001] direction by MOCVD, showing wide linewidths (6 to 20 meV) and negative biexciton binding energy [4].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of single non‐polar GaN quantum dots

Rol¹,

Gayral²,

Founta³

et al. 2006

Physica Status Solidi (b)

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We present a microphotoluminescence study of non polar GaN/AlN quantum dots (QDs) grown along the [1120] axis. Despite the high QD density, single exciton lines could be isolated on the high energy side of the spectral distribution of the QD array emission. Linewidths down to 0.5 meV are reported, which is one order of magnitude lower than previously reported linewidths for polar GaN/AlN QDs. This difference is attributed to the drastic reduction of the internal field in non-polar quantum dots. Temperature dependent measurements were performed up to 180 K.

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Section: Introductionmentioning

confidence: 99%

Optical properties of single non‐polar GaN quantum dots

Rol¹,

Gayral²,

Founta³

et al. 2006

Physica Status Solidi (b)

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“…They benefit from the very high spatial resolution allowed by the picometer-range electron wavelength and ultimately from the spectral resolution arising through laser monochromaticity [1], Indeed, cathodoluminescence (CL) [2] and electron energy-loss spectroscopy (EELS) [3,4] have emerged as major techniques for nanoplasmonic studies; understanding the similarities and differences between these methods and pure optical ones has led to an extremely fertile field of research [5,6], On the other hand, CL in a scanning electron microscope (SEM) has long been a key technique for studying semiconducting materials [7]. Increasingly higher resolution SEMs and the emerging use of STEM-CL [8] makes CL a particularly suitable technique for nanopho tonics applications [9][10][11][12], However, contrary to the case of nanoplasmonics, the comparison between electron and photon based spectroscopies is almost unexplored in the field of nanostructured semiconductors.…”

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confidence: 99%

Photon Bunching in Cathodoluminescence

et al. 2015

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We have measured the second order correlation function [g^{(2)}(τ)] of the cathodoluminescence intensity resulting from the excitation by fast electrons of defect centers in wide band-gap semiconductor nanocrystals of diamond and hexagonal boron nitride. We show that the cathodoluminescence second order correlation function g^{(2)}(τ) of multiple defect centers is dominated by a large, nanosecond zero-delay bunching (g^{(2)}(0)>30), in stark contrast to their flat photoluminescence g^{(2)}(τ) function. We have developed a model showing that this bunching can be attributed to the synchronized emission from several defect centers excited by the same electron through the deexcitation of a bulk plasmon into few electron-hole pairs.

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“…Experimentally realized GaN/AlN QDs with zincblende structure usually grow in the form of truncated square-based pyramids [28][29][30][31][32][33]. Here, we have assumed a QD of pure GaN in the form of a truncated pyramid with a base length of 7 nm and a height of h ¼ basis set [39] and an EBOM, and we compare the results obtained within these two slightly different approaches.…”

Section: Excitonic Spectra Having Calculated Dipole Andmentioning

confidence: 99%

Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots

Schulz¹,

Mourad

Schumacher

et al. 2011

Physica Status Solidi (b)

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Two slightly different, efficient tight-binding (TB) models for the description of the electronic properties of nitride-based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one-particle spectrum of these structures. Using these one-particle QDstates, dipole and Coulomb matrix elements can be calculated, from which the optical properties of these systems can be obtained. These TB calculations have been performed for nitride-based QDs with a cubic zincblende structure and those with a wurtzite crystal structure. In this paper, we discuss the general methodology used and the results obtained for the electronic one-particle states and energies, for the dipole and Coulomb matrix elements, and for the excitonic optical emission and absorption spectra.

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Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

Cited by 39 publications

References 15 publications

Optical properties of single non‐polar GaN quantum dots

Optical properties of single non‐polar GaN quantum dots

Photon Bunching in Cathodoluminescence

Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots

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