Study of Ionizing Radiation Damage in MOS Structures Using Internal Photoemission

Peel, J. L.; Eden, R.C.

doi:10.1109/tns.1971.4326417

Cited by 7 publications

(1 citation statement)

References 10 publications

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“…Large distortion in the low-frequency -curves is observed as a result of oxide damage caused by the -ray irradiation. A large amount of oxide trapped charge was induced in the oxide and an interface trapped charge was generated near the SiO Si interface due to the impact ionization [8]. It is evident that the CoSi samples exhibit a much more severe distortion in the low frequency -curve after irradiation than the WSi samples.…”

Section: Methodsmentioning

confidence: 99%

Radiation hardness comparison of MOS capacitors using tungsten polycide and cobalt polycideas gate electrode materials

2005

IEEE Electron Device Lett.

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In this letter, we investigate the radiation hardness of metal-oxide-semiconductor (MOS) capacitors with tungsten polycide (WSi ) and those with cobalt polycide (CoSi 2 ) as gate electrode materials. CoSi 2 has been considered as a gate/contact material for MOS devices in 0.18 m integrated circuit fabrication due to its low resistivity and good thermal stability. However, we found that MOS capacitors with a CoSi 2 gate electrode exhibited an increase in radiation-induced interface trap density shift of more than one order of magnitude, and more than eighteen times larger in radiation-induced flatband voltage shifts compared with those with the WSi gate electrode, after 1 Mrad Co 60 -ray irradiation under no applied bias.

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Section: Methodsmentioning

confidence: 99%