It is the hybrid pixel detector technology which brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energy more than 30 keV . That's why the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems in recent years. We present in this work the results of our investigations of the Timepix detectors bump-bonded with sensors made of gallium arsenide compensated by chromium (GaAs:Cr). The properties which are mostly important from the practical point of view: IV characteristics, charge transport characteristics, operational stability, homogeneity, temperature dependence as well as energy and spatial resolution are considered. Applicability of these detectors for spectroscopic X-ray imaging is discussed.