Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

Papis-Polakowska, E.; Kaniewski, J.; Szade, J.; Rzodkiewicz, W.; Jasik, A.; Regiński, K.; Wawro, A.

doi:10.1016/j.tsf.2012.09.014

Cited by 7 publications

(1 citation statement)

References 23 publications

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“…The heterojunctions were examined to determine if mixed phases or contamination existed, resulting in a non-abrupt interface. Interface properties for the III-V system have been widely investigated with XPS and various other techniques revealing evidence of ion exchange reactions and clustering 27,28 . XPS studies examining CdO and SnTe single layers have identified the formation of surface oxides upon exposure to atmospheric gases.…”

Section: B Chemical Intermixing At Cdo/snte Interfacesmentioning

confidence: 99%

Evidence of extreme type-III band offset at buriedn-typeCdO/p-type SnTe interfaces

et al. 2015

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At covalent semiconductor interfaces, the band alignment is determined by the location of the band edges with respect to the charge neutrality level, but extension of this method to more ionic semiconductor systems requires further consideration. Using the charge neutrality level concept, a type III (or broken band gap) band offset is predicted at the interface between n-type CdO and ptype SnTe. Employing hard x-ray photoelectron spectroscopy, we report on the chemical composition at the buried interface and the valence band offset. Chemical intermixing at the interface between SnTe and CdO is found to be limited to ∼2.5 nm in our heterojunction samples. We measure a valence band offset of 1.95 (± 0.15 eV) irrespective of the layer configuration. Once the degenerate hole doping of the SnTe is considered, the measured band edge offset agrees with the type III offset predicted from alignment of the band edges with respect to the charge neutrality level of the semiconductors.

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Section: B Chemical Intermixing At Cdo/snte Interfacesmentioning

confidence: 99%