Study of <i>DX</i> center in Cd0.8Zn0.2Te:Cl by positron annihilation

Fung, S.; Shan, Y. Y.; Deng, Anguo; Ling, C. C.; Beling, C. D.; Lynn, Kelvin G.

doi:10.1063/1.368316

Cited by 12 publications

(5 citation statements)

References 28 publications

(35 reference statements)

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“…For both donors, the shallow-donor and the DX-center energy lines intersect at a point above the CBM (see figures 6 and 7). Thus, the Cl and In DX centers are not stable unless the band gap can be increased by applying pressure or by alloying with Zn, as also found experimentally [59][60][61]. Our results show that the shallow donors are compensated by V Cd and A centers, not by DX centers.…”

Section: Energetics Of Shallow Donors: In and CLsupporting

confidence: 76%

“…Thus, the Cl and In DX centers are not stable unless the band gap can be increased by applying pressure or by alloying with Zn, as also found experimentally. 58,59,60 Our results show that the shallow donors are compensated by V Cd and A centers, not by DX centers. The experimental observation of the DX centers in Cd 0.8 Zn 0.2 Te was made after annealing the sample in Cd vapor for several days, which eliminated both V Cd and A centers.…”

Section: )mentioning

confidence: 56%

“…Our results show that the shallow donors are compensated by V Cd and A centers, not by DX centers. The experimental observation of the DX centers in Cd 0.8 Zn 0.2 Te was made after annealing the sample in Cd vapor for several days, which eliminated both V Cd and A centers [59][60][61]. Figure 8 shows the formation energies of important native defects in CdTe.…”

Section: Energetics Of Shallow Donors: In and CLmentioning

confidence: 99%

“…The experimental observation of the DX centers in Cd 0.8 Zn 0.2 Te was made after annealing the sample in Cd vapor for several days, which eliminated both V Cd and A centers. 58,59,60…”

Section: )mentioning

confidence: 99%

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What causes high resistivity in CdTe

Biswas¹,

Du²

2012

New J. Phys.

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Shallow donors are often introduced into semiconductor materials to enhance n-type conductivity. However, they can sometimes also be used to obtain compensation between donors and acceptors, resulting in high resistivity in semiconductors. For example, CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the shallow donor alone cannot be responsible for the high resistivity in CdTe. This is based on the argument that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. Therefore, a deep native donor is usually assumed to exist in CdTe and pin the Fermi level near midgap. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and illustrate different donorspecific mechanisms for achieving carrier compensation. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps. This study highlights how the interaction between impurities and native defects intricately affects the Fermi level pinning in the semiconductor band gap and the associated resistivity of the material.

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Section: Energetics Of Shallow Donors: In and CLsupporting

confidence: 76%

Section: )mentioning

confidence: 56%

Section: Energetics Of Shallow Donors: In and CLmentioning

confidence: 99%

“…The experimental observation of the DX centers in Cd 0.8 Zn 0.2 Te was made after annealing the sample in Cd vapor for several days, which eliminated both V Cd and A centers. 58,59,60…”

Section: )mentioning

confidence: 99%

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What causes high resistivity in CdTe

Biswas¹,

Du²

2012

New J. Phys.

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“…Such donor related lattice defects are called DX centers, which can cause the saturation of the free-electron carriers in the n-type semiconductors. [7][8][9][10][11][12][13][14][15] Structural models for DX centers associated with both group-III and group-VII donors in CdTe have been proposed, [16][17][18][19] which is similar to the brokenbond DX ͑BB-DX͒ model that was initially proposed for the DX centers in Si-doped AlGaAs alloys. However, the reverse structural transformation is subject to a thermal activation barrier, which gives rise to the persistent photoconductivity at low temperatures.…”

mentioning

confidence: 86%

DX centers in CdTe: A density functional study

2008

Applied Physics Letters

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A comparative density functional study of the high-pressure phases of solid ZnX, CdX, and HgX (X = S, Se, and Te): Trends and relativistic effects J. Chem. Phys. 137, 034705 (2012); 10.1063/1.4730300 Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations J. Appl. Phys. DX centers induced by both group-III and group-VII donors in CdTe are studied using density functional calculations. The results show that, for group-VII donors, the DX centers with a cation-cation bond ͑␣and ␤-CCB-DX centers͒ are more stable than the previously proposed broken-bond DX ͑BB-DX͒ center and the ␤-CCB-DX center is the most stable. The stability trend found for the CCB-DX centers for different donors in CdTe is consistent with that for GaAs and GaSb, which suggests a general rule that the CCB-DX centers are favored for small donor atoms on anion site especially for semiconductors with large anion size.

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Fluid Regulation for Life and Human Performance

Byars

2008

Nutritional Supplements in Sports and Exercise

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Study of DX center in Cd0.8Zn0.2Te:Cl by positron annihilation

Cited by 12 publications

References 28 publications

What causes high resistivity in CdTe

What causes high resistivity in CdTe

DX centers in CdTe: A density functional study

Fluid Regulation for Life and Human Performance

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