Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Xi, Yuyin; Liu, Lu; Hwang, Ya Hsi; Phillips, Oluwadamilola; Ren, F.; Pearton, S. J.; Kim, Jihyun; Hsu, Che-Wei; Lo, Chien-Fong; Johnson, J. W.

doi:10.1116/1.4798612

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…The increased current is attributed to the cleavage of S-H bond by noble metal, which is platinum in this device, resulting in the production of hydrogen atom or molecule. 15 Hydrogen molecule have been extensively demonstrated to be detected by Pt-coated Schottky diodes, 10,11 due to the dissociation of hydrogen molecule by platinum, resulting in hydrogen atoms, which cause the polarity change of the Pt/GaN interface, leading to the reduction of Schottky barrier. 16 The mechanism of hydrogen molecule detected by Pt-coated Schottky diodes is well studied and proved.…”

Section: Resultsmentioning

confidence: 99%

“…Many of them have been studied for hydrogen detection. [9][10][11] Apart from the hydrogen detection, the Schottky diodes were also reported for detecting propane, 12 carbon monoxide, 13 acetylene (C 2 H 2 ), nitrous oxide (NO 2 ) 9 and ammonia (NH 3 ), 14 due to the good stability of GaN in high temperature and the high sensitivity of the GaN Schottky diodes. In this study, Pt/GaN Schottky is investigated for trace hydrogen sulfide detection in air as low as 0.1 ppm.…”

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confidence: 99%

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Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection

Xiao

Hsu

Sarangadharan

et al. 2016

ECS J. Solid State Sci. Technol.

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Pt/GaN Schottky diodes were fabricated for detecting hydrogen sulfide at 200 • C. Ga-face GaN was grown on c-plane sapphire substrate by a metal-organic chemical vapor deposition (MOCVD) system. Hydrogen sulfide was mixed with nitrogen and detected from 0.1∼10 ppm with the Pt/GaN Schottky diodes. Hydrogen sulfide caused the current increase in both forward and reversed bias of the Schottky diode. Real-time detection of the hydrogen sulfide was conducted at a forward bias 1.18 V in nitrogen ambient. The sensors show good linear dependence of the current change at forward bias versus the H 2 S gas concentration. The sensitivity in the two ranges from 0.1∼1 ppm and 1∼10 ppm of hydrogen sulfide, are 14.62 and 5.844 μA/ppm, respectively. The detection limit of the sensor is around 0. Hydrogen sulfide is a colorless and highly toxic gas, which is usually found in petroleum drilling, coal mining, or chemical industry. Hydrogen sulfide may cause severe damage to human body when people are exposed in more than 20 ppm. Early detection of hydrogen sulfide can protect people in workplace effectively. Hydrogen sulfide is also resulted from the bacterial degradation of protein, such as from seafood or meat. The concentration of hydrogen sulfide resulted from spoilage food is quite low. Therefore, microsensors for trace hydrogen sulfide detection are attractive for environmental monitoring in workplace and for inspection of the freshness of food as well. Conductive metal oxides, including ZnO, 1 CuO, 2 WO 3 , 3 SnO 2 , 4 and MoO 3 5 were investigated for hydrogen sulfide detection. Tungsten oxide with metal catalysts including Au, Pt and Ag, have showed response of hydrogen sulfide from 2∼30 ppm.6 Polythiophene/WO 3 hybrid structure showed hydrogen sulfide response as low as 5 ppm. 7Molybdenum oxide decorated with reduced graphene oxide showed 50 ppm hydrogen sulfide response.5 Pt/SiO 2 /Si MOS capacitor was also reported to detect more than 250 ppm hydrogen sulfide. 8 However, most of the solid-state microsensors can only detect hydrogen sulfide above 1∼10 ppm. On the other hand, GaN and AlGaN are attractive materials for the fabrication of various chemical and biochemical sensors. A number of sensors based on GaN or AlGaN/GaN Schottky diodes have been investigated as gas sensors. Many of them have been studied for hydrogen detection.9-11 Apart from the hydrogen detection, the Schottky diodes were also reported for detecting propane, 12 carbon monoxide, 13 acetylene (C 2 H 2 ), nitrous oxide (NO 2 ) 9 and ammonia (NH 3 ), 14 due to the good stability of GaN in high temperature and the high sensitivity of the GaN Schottky diodes. In this study, Pt/GaN Schottky is investigated for trace hydrogen sulfide detection in air as low as 0.1 ppm. The detection ranges from 0.1∼10 ppm of hydrogen sulfide. The results show that GaN Schottky diodes are suitable for portable devices, which can be used for instant and real-time hydrogen sulfide detection. ExperimentalThe GaN layer was grown on c-plane sapphire substrate by a metalorganic che...

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection

Xiao

Hsu

Sarangadharan

et al. 2016

ECS J. Solid State Sci. Technol.

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“…at 800 °C under N2 ambient [19,20]. While most studies refer to H2 sensors [21][22][23], AlGaN/GaN sensors were also demonstrated for CO, CO2, NO, NO2, NH3, Cl, CH4, C2H2 [24][25][26][27][28][29][30]. Very few results of H2S detection with wide bandgap semiconductor devices have been reported so far.…”

Section: A C C E P T E D Mmentioning

confidence: 99%

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Sokolovskij

Zhang

Iervolino

et al. 2018

Sensors and Actuators B: Chemical

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AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions.Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.

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“…Hydrogen has been explored for conventional technologies such as hydrocracking of paraffin in petroleum refineries, fuel cells, internal combustion engines, power generation, etc. 6,7 For instance, in Refs. Thus, all hydrogen applications have safety issues requiring continuous and accurate monitoring for hydrogen leak during its transport, storage, and use.…”

Section: Introductionmentioning

confidence: 99%

Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

Chen

Choi

Lai

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inHigh efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells Appl. Phys. Lett. An optically detectable CO2 sensor utilizing polyethylenimine and starch functionalized InGaN/GaN multiple quantum wells Appl. Phys. Lett. 103, 022109 (2013); 10.1063/1.4813604 Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors Appl. Phys. Lett. 96, 232106 (2010); 10.1063/1.3454279Electrical characterization of Pt ∕ Al Ga N ∕ Ga N Schottky diodes grown using AlN template and their application to hydrogen gas sensors A Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells was fabricated. Its hydrogen-sensing properties (e.g., current-voltage characteristics, barrier-height variation, and response) and its hydrogen adsorption properties (e.g., hydrogen reaction kinetics, transient behavior, response time, and activation energy) were studied over a wide range of temperature or H 2 concentration. Results showed that the device is sensitive to hydrogen ambient even at high temperature (response is 0.11 at 300 C in 810 ppm H 2 ). According to the kinetic adsorption analysis, the activation energy of the sensor is 4.9 kcal/mol. Moreover, the sensor could perform rapid hydrogen detection at high temperature (response time is 25.1 s at 400 C in 800 ppm H 2 ). Therefore, the sensor is a useful device for hydrogen-sensing applications, especially at high temperature.

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Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Cited by 6 publications

References 17 publications

Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection

Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

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