Study of high-tech process furnace using inherently safer design strategies (II). Deposited film thickness model

Chen, Chun-Yu; Chang, Kuan‐Chang; Lu, Chih‐Cheng; Wang, Gow-Bin

doi:10.1016/j.jlp.2012.11.004

Cited by 23 publications

(8 citation statements)

References 13 publications

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“…For the joint defense disaster relief system of Taiwan's high-tech plant buildings, Chen et al proposed an effective management system, as shown in Figure 3 (Chen et al, 2013a). Inherently safer design strategies are adopted at the beginning of the process, and when such inherently safer design strategies are adopted, as possible, in the process stage, the application of inherently safer design strategies is reviewed for the overall machine, which is then extended to the overall facility end to discuss items successively.…”

Section: Methodsmentioning

confidence: 99%

“…Figure 5 showed the high-tech process furnace using ISD strategies focused in a series of author studies ideas for reader's reference (Chen et al, 2013a;Chen et al, 2013b;Lu et al, 2014). Therefore, Table 2 summarized a series of studies of applied ISD strategies in the past were to explore on temperature distribution model and process effect, focus on simulation model applied for a vertical furnace could provide data on furnace temperature control for industrial use, then established that deposited film thickness model, this study validated four types of process conditions, and found that the results were very close to the experimental values in the previous studies, thus concluded that the proposed process film thickness mode could meet the requirement of the process capacity, Series No.3 topic discussed the advanced thin film process and reduction of power consumption, in the process of the first batch, as there were only 100 wafers, the 5 th heating zone was shut off, thus, 18.05A was reduced by shutting off the 5 th heating zone.…”

Section: Methodsmentioning

confidence: 99%

“…In order to smoothly attain the above process goals and prevent pollution by particulates, the process tools of the high-tech industry are placed in a cleanroom (as shown in Figure 2) (Chen et al, 2013a;Chen et al, 2013b). It is observed that the plant supply treatment systems of power, chemicals, toxic gas, pure water, and wastewater, are mostly installed on the floor below the cleanroom, and reach the Sub-FAB floor as a return air layer of the cleanroom by power delivery, entering the cleanroom process tools for operation via appropriate switchboard and VMB.…”

Section: Introductionmentioning

confidence: 99%

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Study of high-tech process furnace using inherently safer design strategies (IV). Advanced NAND device design and thin film process adjustment

Chang

Chen

2016

Journal of Loss Prevention in the Process Industries

Self Cite

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According to perspective of process design, using inherently safer design (ISD) strategies could obtain relatively safe levels, while meeting the existing product specification requirements. The experiences for semiconductor manufacturing processes in Taiwan were planning and completed civil construction first, and then followed regulatory limits to provide the maximum piping and equipment for process production line installed in facility area, unlike the general petrochemical industry planning program considerations, indeed often ignored safety consideration. The proposed configuration was the first time applied in NAND (abbreviation of Not AND) flash component technology. There have been no similar schemes used before as in this study, and also the industry has little exploration in this way. It is an important outcome of this study. In this study case, silane (SiH4) was changed to Tetraethyl Orthosilicate (TEOS) for the process to fit ISD substitution strategy of the overall wafer products, under product specification requirements, the more hazardous gaseous silane was replaced by liquid TEOS, thus, even if both have potential hazards of fire, explosion, and poisoning, as the liquid is less likely than gas to leak or diffuse, the potential hazards are reduced, rendering it inherently safer. In this study the potential hazards scenario of 22nm NAND Flash were analyzed first, then established process design proposal of 22nm NAND Flash; the design proposal was created according to the above potential hazard analysis results, then process design proposal simulation and verification were presented, followed by process design proposal experiment and verification in 12" tube, 16 batches of 22nm NAND Flash. There are 25 wafers per batch, and 16 batches of wafer cassettes tested according to the simulation results. The experiment result showed that the product yield increased from 83.88% of SiH4 to 84.25% of TEOS, which was good because the wafer surface defect is well controlled and the various processes have no significant deviation; the direct current (DC) property improvement was increased from 6.16% to 6.76%, which might be due to the more dense liquid reaction with TEOS. In addition, the frequency response improvement increased from 4.97% to 5.16%, due to the dense material related. Finally, the peeling ability improvement also increased from 4.27% to 4.36%, as the TEOS liquid reaction was. The proposed process design improvement, as created in this study, could meet the expected process goals.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Study of high-tech process furnace using inherently safer design strategies (IV). Advanced NAND device design and thin film process adjustment

Chang

Chen

2016

Journal of Loss Prevention in the Process Industries

Self Cite

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“…From miniature sensors in the environment to large data storage physical systems to detect the input process. Through various communication and information technologies, CPS provides users with security application access and support, service and data sharing privileges [8][9][10].…”

Section: Cpss and Iotmentioning

confidence: 99%

Application of Advanced Framework Technology in Smart Cities to Improve Resource Utilization

Chu¹,

Chang²,

Wang³

et al. 2021

Smart Cities - Their Framework and Applications

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Nowadays, the application technology and demand are growth; there have been millions of solutions for user communication in smart cities. However, the quality of the autonomy of handheld devices and the information exchange of applications are functions of requesting services or participating in communications. Therefore, it is very difficult and tedious to implement resource management and control in such an environment. This study here proposes distributed cyber-physical systems (CPS) for agent-based middleware framework (AMF) using to achieve technology, thereby improving the reliability of environmental communication in smart cities. The technical solution has the characteristics of avoiding the problem of data source interruption because of the proxy technology of the linear calculation model. The aforementioned agents are independent and autonomous of each other in terms of providing seamless resource sharing and response scheduling, and have nothing to do with communication time and request queries. In this study, the architecture mainly uses the best linear calculation model to classify overlapping agents, and then allocates non-overlapping resources, and finally analyzes the overall architecture operation performance by responding to processed queries, storage utilization and resource usage, pause time and response.

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“…Such as diode is a device made of semiconductor. Whether from the perspective of technology or economic development, the importance of semiconductors is very huge [3,4]. 5G and artificial intelligence technologies are the main application areas of advanced technology.…”

Section: Fab Advanced Furnace Process Of 12 0 Nm 7 Nmmentioning

confidence: 99%

Study on IoT and Big Data Analysis of 12” 7 nm Advanced Furnace Process Exhaust Gas Leakage

Chang¹,

Chu²,

Wang³

et al. 2020

Linked Open Data - Applications, Trends and Future Developments

Self Cite

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Modern FAB uses a large number of high-energy processes, including plasma, CVD, and ion implantation. Furnaces are one of the important tools for semiconductor manufacturing. According to the requirements of conversion production management, FAB installed a set of IoT-based research based on 12″ 7 nm-level furnaces chip process. Two furnace processing tool measurement points were set up in a 12-inch 7 nm-level factory in Hsinchu Science Park, Taiwan, this is a 24-hour continuous monitoring system, the data obtained every second is sequentially send and stored in the cloud system. This study will be set in the cloud database for big data analysis and decision-making. The lower limit of TEOS, C2H4, CO is 0.4, 1.5, 1 ppm. Semiconductor process, so that IoT integration and big data operations can be performed in all processes, this is an important step to promote FAB intelligent production, and also an important contribution to this research.

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Study of high-tech process furnace using inherently safer design strategies (II). Deposited film thickness model

Cited by 23 publications

References 13 publications

Study of high-tech process furnace using inherently safer design strategies (IV). Advanced NAND device design and thin film process adjustment

Study of high-tech process furnace using inherently safer design strategies (IV). Advanced NAND device design and thin film process adjustment

Application of Advanced Framework Technology in Smart Cities to Improve Resource Utilization

Study on IoT and Big Data Analysis of 12” 7 nm Advanced Furnace Process Exhaust Gas Leakage

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