Study of High Polarized Nanostructure Light-Emitting Diode

Chu, Kuo-Hsiung; Chen, Jo-Hsiang; Hong, Kuo‐Bin; Huang, Yu-Ming; Chiu, Shih-Wen; Ke, Fu-Yao; Sun, Chia‐Wei; Kao, Tsung Sheng; Sher, Chin‐Wei; Kuo, Hao‐Chung

doi:10.3390/cryst12040532

Cited by 3 publications

(4 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, as shown in Figure 5 , all samples’ conduction bands in the EBL region tilt obviously. It is well known that the tilted energy band in the barrier layer actually increases the potential barrier height and enhances the blocking effect on carrier transport [ 25 , 26 ]. To be convenient, the energy difference ∆E between the highest point of conduction band in EBL region and the electron quasi-Fermi level is defined as the EBL’s effective barrier height for electrons.…”

Section: Resultsmentioning

confidence: 99%

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Liu,

Zhao

et al. 2023

Micromachines

View full text Add to dashboard Cite

Currently, GaN-based blue- and green-light-emitting devices have achieved successful applications in practice, while the luminescence efficiency of devices with longer wavelengths (such as yellow light) is still very low. Therefore, in this paper, the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content in the last InGaN quantum well, which is next to the p-type GaN electrode layer, are investigated numerically to reveal a possible physical mechanism by which the different distribution of In content in the active region impacts the carrier capture and the light emission process in yellow InGaN/GaN MQWs. The simulation results show that at low injection currents, the luminescence efficiency of high-In-content yellow MQWs is enhanced, which can be ascribed to the enhanced radiative recombination process induced by the increased carrier concentration in the last InGaN quantum wells with promoted carrier capture ability. However, in the case of high injection condition, the luminescence efficiency of yellow MQWs deteriorates with increasing In content, i.e., the droop effect becomes remarkable. This can be ascribed to both significantly enhanced Auger recombination and electron leakage in the last InGaN quantum well, induced also by the promoted capture ability of charge carriers.

show abstract

Section: Resultsmentioning

confidence: 99%

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Liu,

Zhao

et al. 2023

Micromachines

View full text Add to dashboard Cite

show abstract

“…By combining 3D structured LEDs with photonic crystals, 0.545 polarization of tipless coreshell nanorod LEDs and 0.188 polarization of tip-shell nanorod LEDs had been achieved, a design that promised to open the way for new optoelectronic devices. 129 The structure is schematically shown in Figure 43D. As observed in Figure 42E,F, the combination of the 3D core-shell nanorod LED and PC produced a highly polarized light source with a narrow divergence angle of up to 56 • , making it a strong candidate for new optoelectronic devices.…”

Section: D Pc Ledsmentioning

confidence: 96%

“…(F) Time‐domain finite‐difference (FDTD) simulations of the light confinement and calculated divergence angle of the structure. Reproduced from refs 128, 129. with permission of the Optical Society of America and MDPI.…”

Section: Different Phc Structures To Improve the Optoelectronic Perfo...mentioning

confidence: 99%

“…studied and reported on two different 3D shell–core nanorod LEDs and the different properties between the configurations. By combining 3D structured LEDs with photonic crystals, 0.545 polarization of tipless core–shell nanorod LEDs and 0.188 polarization of tip–shell nanorod LEDs had been achieved, a design that promised to open the way for new optoelectronic devices 129 . The structure is schematically shown in Figure 43D.…”

Section: Different Phc Structures To Improve the Optoelectronic Perfo...mentioning

confidence: 99%

See 1 more Smart Citation

Design of photonic crystals for light‐emitting diodes

Wang,

Dong,

et al. 2023

J Am Ceram Soc.

View full text Add to dashboard Cite

Photonic crystals (PC) can greatly enhance the optoelectronic performance of LEDs, due to their distinctive color and photonic band gap, etc. Therefore, many scholars have conducted extensive research based on the high light extraction efficiency, good monochromaticity, and other excellent optoelectronic properties of PC LEDs. This review discusses the main principles of photonic crystals to improve the optoelectronic performance of LEDs and summarizes 12 structural applications of photonic crystal LEDs, such as PC slabs, Bragg grating, Backside reflectors, Surface PC, Embedded PC, Dual PC, PC beads, CPC, PC thin films, LIPC, defective PC, composite architectures with other materials that boost LED optoelectronic qualities. In summary, it is found that photonic crystals can not only greatly improve the light extraction efficiency of LEDs but also improve other optoelectronic properties such as luminescent color, and directional radiation angle, and reduce the manufacturing cost of LEDs. Photonic crystal LEDs are expected to be a strong candidate for future lighting technology Finally, the prospects and challenges of PC LEDs are summarized.This article is protected by copyright. All rights reserved

show abstract

Ultra High Luminous Efficiency p-Type Surface Defect Structure GaN LED

Zhu

Ying

2022

NANO

View full text Add to dashboard Cite

In this paper, we propose a double-layer SiO2 photonic crystal LED with a linear defect structure in the [Formula: see text]-GaN layer, the purpose is to solve the problem of low light extraction efficiency caused by diffusion scattering effect. We used FDTD modeling to analyze the light-emitting characteristics of GaN LED, after optimizing the structural parameters of two-dimensional photonic crystals, the light extraction efficiency is improved from 19.4% to 35.2%, the light extraction efficiency is increased by 1.8 times, meanwhile the light output power is also increased by 1.86 times. The introduction of the defect structure does not affect the [Formula: see text]–[Formula: see text] characteristics of the LED, and the output power of the LED is increased by 11% under the current of 300[Formula: see text]mA.

show abstract

Study of High Polarized Nanostructure Light-Emitting Diode

Cited by 3 publications

References 31 publications

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Design of photonic crystals for light‐emitting diodes

Ultra High Luminous Efficiency p-Type Surface Defect Structure GaN LED

Contact Info

Product

Resources

About