Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors
Xiaojie Lu,
Hongxia Guo,
Zhifeng Lei
et al.
Abstract:In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × 1011 p/cm2 and 5 × 1011 p/cm2, respectively. Decreased saturation current, increased Dirac sheet resistance, and negative drift in the Dirac voltage in response to proton irradiation were observed. According to the transfer chara… Show more
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