2019
DOI: 10.1039/c9ra06903h
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Study of half metallicity, structural and mechanical properties in inverse Heusler alloy Mn2ZnSi(1−x)Gex and a superlattice

Abstract: The electronic and magnetic properties of Mn2ZnSi(1−x)Gex (x = 0.0, 0.125, 0.25, 0.375, 0.5, 0.625, 0.75, 0.875, and 1.0) inverse Heusler alloys and Mn2ZnSi/Mn2ZnGe superlattice have been investigated using first-principles calculations.

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Cited by 8 publications
(4 citation statements)
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References 62 publications
(101 reference statements)
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“…For example, the first reported SGS material was just obtained by substituting Co for Pd in PbPdO 2 . According to the previous studies, the doping of transition metal and s–p elements usually has a different effect on the control of the band structure. In order to develop a new SGS material, we propose to dope transition metal and s–p elements in half-metals, nearly half-metals, or magnetic semiconductors. In fact, the band structures of half-metals, SGSs, and magnetic semiconductors are continuously transitional, as shown in Figure S1, indicating that it is highly possible to achieve one of them by doping the other one.…”
Section: Results and Discussionmentioning
confidence: 99%
“…For example, the first reported SGS material was just obtained by substituting Co for Pd in PbPdO 2 . According to the previous studies, the doping of transition metal and s–p elements usually has a different effect on the control of the band structure. In order to develop a new SGS material, we propose to dope transition metal and s–p elements in half-metals, nearly half-metals, or magnetic semiconductors. In fact, the band structures of half-metals, SGSs, and magnetic semiconductors are continuously transitional, as shown in Figure S1, indicating that it is highly possible to achieve one of them by doping the other one.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Spintronic devices have many advantages, such as higher data storage capacity, lower power consumption, higher speed for data * Author to whom any correspondence should be addressed. transfer and processing over the conventional semiconducting electronic devices [4,5]. The spintronic materials have extensive applications such as spin-transfer torque, giant magnetoresistance, magnetic random access memory, and magnetic tunnel junction devices, which plays an important role in materials sciences [6].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it is important to nd the completely spin-polarized HM and SGS which are robust against the stoichiometric defects and lattice distortion. Additionally, the substitution is an effective way to tailor the electronic structure, [58][59][60][61][62][63][64] where the rst SGS was obtained by substituting Co atom for Pd in PbPdO 2 . 21,22 Ayuela et al rstly reported that Co 2 MnGa has a large spin-up density of states (DOS) at the Fermi level, while spin-down density of states at the Fermi level nearly vanishes, which results a high spin polarization despite it's not completely spin-polarized.…”
Section: Introductionmentioning
confidence: 99%