The exciton localization (ELZ) in polar (0001) and semipolar (112̅ 2) In 0.2 Ga N 0.8 multiplequantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. The ELZ in the (112̅ 2) MQW was found to be much stronger (ELZ degree σ E ∼ 40 -70 meV) compared to the (0001) MQW (σ E ∼ 5−11 meV) that was attributed to the anisotropic growth on the (112̅ 2) surface. This strong ELZ was found to cause a blue-shift of the (112̅ 2) MQW exciton emission with rising temperature from 200 to 340 K, irrespective of excitation source used. A lower luminescence efficiency of the (112̅ 2) MQW was attributed to their anisotropic growth, and higher concentrations of unintentional impurities and point defects than the (0001) MQW.