Study of EUV outgassing spatial distribution toward witness plate in the EUV outgas tester

Kikuchi, Yukiko; Shiobara, Eishi; Tanaka, Hiroyuki; Takagi, Isamu; Katayama, Kazuhiro; Sugie, Norihiko; Takahashi, T.; Inoue, Soichi; Watanabe, Takeo; Harada, Tetsuo; Kinoshita, Hiroo

doi:10.1117/12.2011709

Cited by 11 publications

(5 citation statements)

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“…The EB-based evaluation tool, EUVOM-9000 (Litho Tech Japan Co.), is located at Tsukuba Japan. The EUV-based tool is set up at the beamline 9 of NewSUBARU which is the synchrotron radiation facility of the University of Hyogo [7][8][9][10][11][12][13]. The resist thicknesses were 60 nm.…”

Section: Resist Outgas Evaluation Conditionsmentioning

confidence: 99%

Recent Progress of EUV Resist Technology in EIDEC

Shiobara¹

2014

J. Photopol. Sci. Technol.

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EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV resists, as the outgassing of resists during EUV exposure can cause carbon contamination on EUV mirrors, thereby degrading its reflectivity. This paper outlines the recent progresses in EUV resist technology at the EUVL Infrastructure Development Center.

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Section: Resist Outgas Evaluation Conditionsmentioning

confidence: 99%

Recent Progress of EUV Resist Technology in EIDEC

Shiobara¹

2014

J. Photopol. Sci. Technol.

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“…The EUV type tester named HERC was developed for basic outgassing research and not for the resist qualification inorder to avoid the exposure in the scanner. Previous studies reported fundamental research results of the resist outgassing from the CAR by using the model resists available to-date [9,10]. Resist outgas test sites including the EIDEC continued the evaluation of many commercially available EUV resists.…”

Section: Introductionmentioning

confidence: 99%

EUV resist outgassing analysis for the new platform resists at EIDEC

Shiobara¹,

Kikuchi²,

Mikami³

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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The suppression of outgassing from the EUV resist is one of the significant challenges, which has to be addressed for realizing EUV lithography (EUVL). The outgassing might be the main contributor involved in the contamination of the mirror optics in scanners. This may result in reflectivity losses. The pragmatic outgassing test that utilizes the witness sample (WS) was used as a general method to quantify the outgassing level for commercially available chemically amplified resists (CAR). There are two types of contaminations. The first type of contamination involves a cleanable contamination that mainly comprises hydrocarbons that can be removed by the hydrogen radical cleaning. Another type of contamination includes the noncleanable contamination that remains on the WS even after hydrogen radical cleaning. Several outgas qualification results were evaluated at the EIDEC [1, 2]. The data indicated that contaminations by the CAR mainly comprised the cleanable contaminations. The data also indicated that there were almost negligible noncleanable contaminations from the CAR.EUV resist communities accelerate the development of high sensitivity resists to compensate the low power of the EUV source. Nonchemically amplified resist (nonCAR) with a new platform is a candidate for high sensitivity resists. The nonCAR includes some types of metal elements with high absorbance for EUV light. There is very limited research on the outgassing characteristics of the nonCAR. In this study, we considered an EUV exposure process in the actual EUV scanner and EUV resists were exposed in a hydrogen environment. A potential risk could result from the reaction of the hydrogen radicals generated by the EUV light with the metal elements in the nonCAR and the metal hydride outgases from the resist. This would result in a noncleanable contamination on the EUV mirror [3]. The knowledge with respect to outgassing from an organic metal complex is insufficient even in a vacuum condition. Hence, the study involved the preparation of certain types of organic metal complexes as model materials. Then, the outgassing evaluations for the materials were carried out as a fundamental studies in a vacuum condition. The results were reported in this study.

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“…In our previous study, we compared the cleanable contamination of several model resists that showed a linear correlation between EUV-and EB-based evaluation systems [2]. Moreover, we studied noncleanable contamination on the unexposed area and clarified its dependency on the geometry of the WS in the vacuum chamber [3][4][5][6]. Moreover the comparison of the cleanable and noncleanable contamination in the resist family, which consisted of the same components with various protecting ratios and PAG loading, showed a good correlation [7,8].…”

Section: Introductionmentioning

confidence: 99%

Contribution of EUV resist components to the non-cleanable contaminations

Shiobara¹,

Takahashi²,

Sugie³

et al. 2014

SPIE Proceedings

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The suppression of outgassing from extreme ultraviolet (EUV) resist needs to be addressed for realizing EUV lithography (EUVL) because outgassing is likely the main contributor to the contamination of mirror optics in EUV scanners, which results in reflectivity loss. Resist outgassing causes two types of contamination: cleanable contamination, involving hydrocarbon contaminants, and noncleanable contamination, involving noncarbon components. The relation of cleanable contamination between EUV-and electron beam (EB)-based evaluations is linear. However, the relation of noncleanable contamination is not clear. In this study, we investigated the contribution of EUV resist components to noncleanable contamination using different photoacid generator components. The cleanability of noncleanable elements (sulfur, iodine, chlorine, and bromine) in contamination films was measured and compared for the EUV-and EB-based outgas testers. The result suggested that the chlorine and bromine contaminants were completely removed after cleaning. On the other hand, sulfur and iodine remained even after cleaning. This suggested that the careful use of iodine in resist materials is necessary due to its high photoabsorption and low cleanability. In addition, the cleaning rate and noncleanability of contaminants in the EUV-based test were larger than in the EB-based test. This suggests that the contamination film in the EUV-based test is more porous than that in the EB-based test.

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Study of EUV outgassing spatial distribution toward witness plate in the EUV outgas tester

Cited by 11 publications

References 0 publications

Recent Progress of EUV Resist Technology in EIDEC

Recent Progress of EUV Resist Technology in EIDEC

EUV resist outgassing analysis for the new platform resists at EIDEC

Contribution of EUV resist components to the non-cleanable contaminations

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