Abstract:Defects relating to Er-doping of hydrogenated amorphous silicon films in amorphous/ crystalline (a-Si:H(Er) / n-Si) heterostructures used as light emitters were studied. Electrical parameters of the defects were evaluated by thermally activated current (TAC) and capacitance (TACap) spectroscopy, and high-frequency (1 MHz) capacitance-voltage (C-V) characteristics measured at 77 K. For charging of the traps, visible light illumination at low temperatures and thermal-bias stress at various temperatures were used… Show more
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