Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon

Abstract

In this paper, the deep levels found by Deep‐Level Transient Spectroscopy in Si‐O superlattices (SLs) on n‐type silicon are reported. Samples have been grown with one, two or five silicon‐oxygen layers, separated by 3 nm of silicon. A Cr Schottky barrier (SB) is thermally evaporated on top of the SL. Similar as for p‐type silicon, no deep levels have been found for a bias pulse in depletion, while a broad distribution of electron traps shows up when pulsing into forward bias. At the same time, these bands are absent in a zero SL reference sample. Similar as for the p‐type results, the trap filling of the electron states exhibits a logarithmic capture. The possible origin of this slow filling will be discussed.