Study of electrical and dielectric properties of Sr3CoSb2O9 perovskite by impedance spectroscopy

Fatima, Syeda Arooj; Shaheen, Rubina; Shahzad, Khurram

doi:10.1007/s00339-021-04597-4

Cited by 10 publications

(7 citation statements)

References 34 publications

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“…We observed that the M ′ approaches to zero at transition frequency (similar as for ε′) and then starts rising with the frequency enhancement and attains a constant value after 10 4 Hz, as shown in Figure a. Below the transition frequency, M ′ approaches zero value because of the negligible electrode polarization because the applied electric field is not sufficient to act as restoring force for the polaron flow. − After the transition frequency, the hopping of polarons shows the rise in M ′. With the temperature enhancement, the M ′ curve shifts toward a higher value frequency, which suggests more hopping of the polaron indicating polaron delocalization with the increase in temperature.…”

Section: Resultsmentioning

confidence: 53%

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

et al. 2022

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The lead-free Cs2AgBiBr6 double perovskites have recently emerged as promising candidates for optoelectronic applications due to their less toxicity and high stability. Although the photophysical study of Cs2AgBiBr6 has been extensively explored, the same for dielectric relaxation and carrier conduction remains elusive. Here, we uncover the dielectric relaxation and charge conduction mechanism in the Cs2AgBiBr6 single crystals using temperature-dependent electrochemical impedance spectroscopy in correlation with modulus spectroscopy. We found that the ionic displacement and space charge polarization are mainly responsible for the dielectric response. A sharp transition frequency as ∼191 Hz for 0 °C to ∼492 Hz for 90 °C was observed in the dielectric constant (ε′) versus temperature study, where dε′/dT exhibits a positive and negative coefficient below and above the transition frequency, respectively. Stevels model analysis suggests that the contribution of traps reduces with the increase in temperature and therefore conduction enhances. This model also confirms the polarons as the main conduction carriers in the Cs2AgBiBr6 semiconductor. The polaron hopping and binding energy were estimated as W H = 0.17 eV and E P = 0.34 eV, respectively. The binding energy of the polaron is larger than the room-temperature thermal energy, indicating the polaron hopping instead of free charge carrier transport as the dominant conduction mechanism. Furthermore, the imaginary part of -Z″ and M″ demonstrates the temperature-activated polaron relaxation from non-Debye type to Debye type process in Cs2AgBiBr6 crystals. Our study provides fundamental insights into the dielectric relaxation behavior needed for developing efficient dielectric switches and unveils the details of the carrier conduction mechanism in lead-free double perovskites.

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Section: Resultsmentioning

confidence: 53%

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

et al. 2022

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“…28 Moreover, the microwave dielectric properties and crystal structure of A 3 CoNb 2 O 9 (A = Ba, Sr, Ca) were observed to be highly sensitive to the A-site cation and underlying microstructure. 29 Unlike Sr 3 CoSb 2 O 9 , 29,30 the current investigation of Ba 3 CoSb 2 O 9 was found to show a large dielectric constant, ε ′, and dispersion over a wide range of frequencies (1 Hz to 1 MHz). Since there have been no previous reports on the dielectric response of the 6H perovskite Ba 3 CoSb 2 O 9 , in the present study it was synthesized using a solid-state technique, and its structural and dielectric properties and their correlation were studied in detail.…”

Section: Introductionmentioning

confidence: 57%

Relaxor ferroelectric-like glassy dielectric dispersion in the triple perovskite Ba₃CoSb₂O₉

Kumar,

Nathawat,

Yogi

et al. 2024

Phys. Chem. Chem. Phys.

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“…The second one, located beyond ∼10 4 Hz, is related to the nc-Si relaxation. 51,52 When the temperature increases, a shift toward higher frequencies is noticed for both the low-frequency and high-frequency relaxation peaks. The relaxation frequency is inversely associated with the product of resistance and capacitance.…”

Section: Resultsmentioning

confidence: 99%

“…This pattern might be explained by electrons accumulating at grain boundaries after arriving in the region via the hopping process. 52 The latter zone is determined by comparing the behavior to the earlier. There is a drop in dielectric loss at higher frequencies, which diminishes progressively and tends to zero regardless of temperature.…”

Section: Resultsmentioning

confidence: 99%

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Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Shyam

Das

2022

ACS Appl. Electron. Mater.

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The impedance characteristics and ac conductivity behavior of the silicon oxy-carbide (SiO x C y :H) network have been investigated during its transition from an amorphous dominated to a crystalline populated structure, grown by varying only the growth temperature (T S) from 160 to 180 °C. At elevated T S, the Si nanocrystals (Si-ncs) increased in size and number density, with corresponding elevation in crystallinity from 28 to 45%. Two distinct dielectric relaxations for the individual a-SiO x C y :H and nc-Si components were identified in the low-frequency and high-frequency zones, respectively, for the film deposited at higher T S (180 °C). In contrast, for the lower T S (160 °C)-grown film, a significant fraction of the ultra-nanocrystalline (unc-Si) component contributed only one consolidated relaxation peak at a moderate frequency. The scaling measurements of the imaginary part of impedance (−Z Im) revealed two distinct physical events for a-SiO x C y :H and nc-Si, both being temperature scale-independent. The activation energy of relaxation is low for the ordered nc-Si component and high for the disordered a-SiO x C y :H matrix. According to the Bode plot analysis, the presence of several defects in the grain boundary contributed a poor carrier lifetime to the nc-Si component, while the a-SiO x C y :H matrix with lesser defects had a longer carrier lifetime. An equivalent circuit model formed by parallel resistors and constant phase elements (R||CPE), following Nyquist plot analysis, demonstrated an intense association between the microstructural and charge carrier characteristics. The temperature-dependent ac-conductivity behavior of the mixed-phase material is well explained by the nonoverlapping small polaron tunneling model, at two individual stages across a transition from an amorphous to crystalline configuration around a small span of growth temperature.

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Study of electrical and dielectric properties of Sr3CoSb2O9 perovskite by impedance spectroscopy

Cited by 10 publications

References 34 publications

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

Relaxor ferroelectric-like glassy dielectric dispersion in the triple perovskite Ba₃CoSb₂O₉

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

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Study of electrical and dielectric properties of Sr3CoSb2O9 perovskite by impedance spectroscopy

Cited by 10 publications

References 34 publications

Dielectric Relaxation and Polaron Hopping in Cs2AgBiBr6 Halide Double Perovskites

Dielectric Relaxation and Polaron Hopping in Cs2AgBiBr6 Halide Double Perovskites

Relaxor ferroelectric-like glassy dielectric dispersion in the triple perovskite Ba3CoSb2O9

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiOxCy:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

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Product

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Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

Dielectric Relaxation and Polaron Hopping in Cs₂AgBiBr₆ Halide Double Perovskites

Relaxor ferroelectric-like glassy dielectric dispersion in the triple perovskite Ba₃CoSb₂O₉

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone