Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

Li, Hongjian; Wong, Matthew S.; Khoury, Michel; Bonef, Bastien; Zhang, Haojun; Chow, YiChao; Li, Panpan; Kearns, Jared; Taylor, Aidan A.; Mierry, P. de; Hassan, Z.; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1364/oe.27.024154

Cited by 44 publications

(35 citation statements)

References 32 publications

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“…Later, efficient semipolar (11−22) green micro-LED was fabricated, which showed a smaller blueshift than c-plane LED and especially a size-independent EQE of 2%, paving a way for large-area display application. 171 Polarized phosphor-free white semipolar LEDs on (20−21) GaN/patterned sapphire template has been presented, which showed a LOP of 3.9 mW at 100 mA and especially a high 3 dB modulation bandwidth of 660 MHz for visible light communication application. 172 The light radiation distribution pattern of white LED could be defined by the pattern morphology of PSS, leading to better white-light package efficiency and uniform illumination.…”

Section: Comprehensive Comparison Of Leds On Pss With Different Struc...mentioning

confidence: 99%

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Application of patterned sapphire substrate for III-nitride light-emitting diodes

Zhou

Zhao

et al. 2022

Nanoscale

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Section: Comprehensive Comparison Of Leds On Pss With Different Struc...mentioning

confidence: 99%

Section: Influence Of Structural Parameters Of Pss On Led Propertiesmentioning

confidence: 99%

Application of patterned sapphire substrate for III-nitride light-emitting diodes

Zhou

Zhao

et al. 2022

Nanoscale

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“…At a low current density of 1 A cm −2 , the EQEs of these LEDs are typically ten times lower than their peak EQEs. [ 16–25 ] Therefore, improving the efficiency under small injection below 1 A cm −2 is an urgent need in micro‐LED displays.…”

Section: Introductionmentioning

confidence: 99%

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

Wang

Chen

et al. 2021

Laser & Photonics Reviews

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Micro‐LEDs are regarded as ideal light sources for next‐generation display and high‐speed visible‐light communication (VLC). However, the conventional micro‐LEDs based on InGaN quantum well (QW) active region suffer from a low efficiency under small injection (below 1 A cm−2) due to the size‐dependent effect and a limited 3 dB bandwidth (hundreds of MHz) due to quantum‐confined Stark effect. Here, InGaN quantum dots (QDs) are proposed as the active region of micro‐LEDs to address these challenges for their strong localization and low‐strain features. Green InGaN QDs are self‐assembled under Stranski–Krastanov (SK) and Volmer–Weber (VW) modes by using metal organic vapor phase epitaxy. The SK QDs can shift the peak efficiency of a micro‐LED to an extremely low current density of 0.5 A cm−2 (almost two orders of magnitude lower compared to QW ones) with an external quantum efficiency of 18.2% (nearly two times higher than present green micro‐LEDs). Besides, green micro‐LEDs based on VW QDs reach a 3 dB bandwidth of 1.3 GHz. These results indicate that InGaN QDs can provide an ultimate solution to micro‐LEDs for display and VLC applications, especially since they are fully compatible with current light‐emitting diode (LED) industrial technology.

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“…[4,5] Therefore, nonpolar and semipolar GaN thin films have been studied to improve emission efficiency. [4][5][6][7][8][9] In addition, as the indium incorporation rate of the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN film is higher than that of the nonpolar and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) GaN films, the semipolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN is useful for achieving long wavelength (>500 nm) LEDs. [6] Therefore, many research groups have attempted to achieve high-performance green LEDs using semipolar (11)(12)(13)(14)(15)…”

Section: Introductionmentioning

confidence: 99%

“…[6] Therefore, many research groups have attempted to achieve high-performance green LEDs using semipolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN films. [7][8][9][10] However, semipolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN-based LEDs grown on m-plane sapphire still exhibit relative low emission efficiency due to poor crystal properties such as high threading dislocations (%10 10 cm À2 ), basal stacking faults (BSFs) (%10 5 cm À1 ), and arrowhead-like surface structures. [9,10] These crystal defects can affect indium incorporation in the InGaN active layer, [11,12] resulting in a significant broadening and band-filling effect of the emission spectrum.…”

Section: Introductionmentioning

confidence: 99%

Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes

Choi

Baek

Kim

et al. 2020

Physica Status Solidi (a)

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Red, green, and blue electroluminescence (EL) in semipolar (11-22) GaN-based light-emitting diodes (LEDs) is achieved using SiO 2 hexagonal patterns epitaxial lateral overgrowth (HP-ELO). The size, density, and area of arrowhead-like surface structure of the semipolar (11-22) HP-ELO GaN are significantly affected by increasing the SiO 2 hexagonal patterns from 6.0 to 15.0 μm. The full width at half maximum and the blueshift wavelength of EL spectra increases with increasing from 6.0 to 9.0 μm, and then decreases with increasing the hexagonal pattern width to 15.0 μm. These results show a similar tendency to the surface area of arrowhead-like structure. In addition, micro-EL images show that indium localization-induced low energy emission initiates at the front end of arrowheadlike pattern, and then blueshifted emissions propagate to the side edges as the injection current increases. Therefore, it suggests that HP-ELO can control the arrowhead-like surface structure composed of different indium compositions, which can achieve red, green, and blue emissions of a semipolar (11-22) HP-ELO GaN-based LED.

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Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

Cited by 44 publications

References 32 publications

Application of patterned sapphire substrate for III-nitride light-emitting diodes

Application of patterned sapphire substrate for III-nitride light-emitting diodes

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes

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