2011
DOI: 10.1016/j.apsusc.2011.07.085
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Study of effect annealing temperature on the structure, morphology and photocatalytic activity of Si doped TiO2 thin films deposited by electron beam evaporation

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Cited by 59 publications
(22 citation statements)
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“…After deconvolution, two O 1s peaks centered at 529.3 and 531.1 eV, respectively, are shown. The peak centered at 529.3 eV is associated with the lattice oxygen atoms of TiOTi bond, whereas the peak at 531.1 eV is associated with the oxygen defects in the matrix of TiO 2 caused by oxygen vacancy . The peak area percentages for lattice oxygen atoms and oxygen vacancy are 48.7% and 51.3%, respectively.…”
Section: Resultsmentioning
confidence: 98%
“…After deconvolution, two O 1s peaks centered at 529.3 and 531.1 eV, respectively, are shown. The peak centered at 529.3 eV is associated with the lattice oxygen atoms of TiOTi bond, whereas the peak at 531.1 eV is associated with the oxygen defects in the matrix of TiO 2 caused by oxygen vacancy . The peak area percentages for lattice oxygen atoms and oxygen vacancy are 48.7% and 51.3%, respectively.…”
Section: Resultsmentioning
confidence: 98%
“…The out‐diffusion of Si atoms from the quartz substrate into the TiO 2 film may contribute to an enhancement of the photocatalytic effect as the Si atoms were reported to act as a transfer bridge for electrons and holes for the diffusion of photogenerated electron‐hole pairs to the film surface . In addition, Si‐doped TiO 2 films were reported to show a reduction in electron and holes recombination rate due to a shift in the conduction and valence band position . With the reduction in recombination rate, faster degradation of methyl orange and rhodamine B have been reported …”
Section: Resultsmentioning
confidence: 99%
“…The binding energy of Ti 2p peak for AHFSTiO 2 (20) is 464.60 eV, which is 0.64 eV greater than that of pure TiO 2 . The electronegativity of Si is greater than that of Ti, which causes decrease of electron density around Ti atom and effective positive charge on the Si atoms [8,19]. Therefore, presence of silicon species in AHFS- …”
Section: Xps Analysismentioning
confidence: 94%