Study of EB Resist Simulation for EUV Resist Evaluation

Abstract

We are now beginning to see the application of extreme ultraviolet (EUV) lithography to the mass production of 7 nm node logic devices, primarily for smartphones. This lithography technology currently attracts the most interests due to its expected use in upcoming mass production of 5nm node and beyond for semiconductor devices. The development of EUV resists are one of the key research areas. However, EUV exposure instruments are extremely costly, and there are currently no tools that can be used for resist development. To promote the development of EUV resists, we investigated an evaluation method based on EB exposure for EUV resist. Due to similar exposure reaction mechanisms to EUV exposure, EB exposure offers a practical alternative. This paper examines the use of EB exposure simulations to advance EUV resist development.

Fundamental Evaluation of KrF Resist Changing Formulation by EB and EUV Exposure

“…For example, it is well known a trade-off between resolution, LER (Line Edge Roughness) and sensitivity, so-called RLS Trade-off [11][12][13][14][15]. Currently EB exposure has been used for the development of EUV photoresist [16]. This is because there are few sites which EUV exposure equipment is available in Japan and EUV exposure equipment is very expensive.…”

Comparison of photoresist sensitivity between KrF, EB, and EUV exposure

“…For example, it is well known a trade-off between resolution, LER (Line Edge Roughness) and sensitivity, so-called RLS Trade-off [11][12][13][14][15]. Until now, the development of EUV photoresist has been carried out by EB exposure [16]. This is because EUV exposure equipment is not available in Japan and EUV exposure equipment is very expensive.…”

Influence of Glycerol in Developer on Novolak-Type Positive-Tone Resist Solubility

“…The lithography performance of a novolak-type positive-tone resist in developer TMAH aqueous solution with or without glycerol is observed and compared based on a sensitivity curve and exposure dose vs. solubility curve [13][14][15][16]. Furthermore, we compared the resolution of the novolak resist with the developed TMAH aqueous solution with or without glycerol by the lithography simulation system (PROLITH) and direct observation of the resist pattern profile using scanning electron microscopy (SEM) images [17][18][19][20].…”