Abstract:Triple junction solar cells lattice matched to InP have the potential to exceed 50% efficiency under AM1.5 500x illumination with a bandgap stack of 1.74 11.1 10.7 eV. A top cell having 1.74 eV requires development of high-quality InAIAsSb, which currently has very little development effort reported. Preliminary deep-level transient spectroscopy results in p-type InAIAsSb indicate the presence of deep-levels 0.20 eV and 0.44 eV above the valence band with concentration _10 15 cm-3 • Experiments such as spectra… Show more
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