Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Lin, Dai-Jie; Yang, Jhih-Yuan; Chang, Chia‐Ming; Huang, JianJang

doi:10.1109/jeds.2021.3132429

Cited by 9 publications

(5 citation statements)

References 22 publications

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“…As we know the current collapse behavior in the GaN HEMT is related to the trap states, the larger the normalized dynamic R on , the more serious the current collapse. [27][28][29][30] The significant decrease of the dynamic R on is observed as the drain voltage increases in samples, in comparison, the dynamic R on of sample A and sample B are 1.5 and 1.1 times higher than the static R on after OFF-state V DS stresses at 400 V, respectively, it indicates that sample B has a smaller current collapse effect.…”

mentioning

confidence: 88%

The effect of SiN _x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

huang¹,

Xing²,

Yu³

et al. 2022

Appl. Phys. Express

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A thin SiNx film was deposited on the p-GaN layer before H plasma implantation, which cause four orders of magnitude reducing in gate reverse leakage current. The OFF-state breakdown voltage increases by 89%. It displays a more stable dynamic performance. It is believed that the decrease of gate leakage current is attributed to the increase of trap activation energies in the p-GaN layer, It is concluded that improved dynamic characteristics are owing to the fact that the SiNx film blocks the excessive H plasma into the AlGaN barrier layer and reduces the implantation damage in AlGaN barrier layer.

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mentioning

confidence: 88%

The effect of SiN _x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

huang¹,

Xing²,

Yu³

et al. 2022

Appl. Phys. Express

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“…Small signal gain comparison shown in table 2 explains the suitability of dual-FP structure. The carrier distribution in the channel region provides insight into the enhancement made possible by the dual-gate configuration [87].…”

Section: Current Collapse Suppressionmentioning

confidence: 99%

An insight to current collapse in GaN HEMT and suppressing techniques

et al. 2023

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High Electron Mobility Transistors (HEMT) made of aluminum gallium nitride/gallium nitride (AlGaN/GaN) have become a major focus for all electronic devices based on gallium nitride due to its excellent system characteristics. AlGaN/GaN HEMTs have severe issues that degrade their performance and the drain current collapse (CC) is one of them. During switching operations, the CC increases the on-resistance (Ron) leading to an increase in device loss and temperature. This review features the basics related to the current collapse in HEMT and its significance in performance degradation. This paper is concerned with the various advancements reported in recent years to suppress CC in GaN HEMT. Various techniques such as passivation, illumination, free-standing GaN substrate, GaN cap layer including high resistivity GaN cap layer, buffer design, and field plates (FP) have been introduced by various researchers to combat CC. This review analysis will help researchers to employ suitable techniques in their HEMT design for future development.

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“…Previously, we demonstrated that the DG GaN HEMTs could effectively suppress the current collapse phenomenon [15]. The fixed voltage at the additional gate electrode attracts extra electrons to compensate depleted carriers due to current collapse.…”

Section: Introductionmentioning

confidence: 99%

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

Lin,

Chang,

Barman

et al. 2023

IEEE Access

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Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher voltage drop when the gate is off. To address this issue, we propose a dual-gate high-electron-mobility transistor (HEMT) to enhance reverse conduction. The device is modulated by the main gate electrode adjacent to the source, while a fixed bias is applied on the auxiliary gate electrode near the drain contact. We achieve a reverse conduction voltage as low as -0.16 V and 89.03 % lower reverse conduction power loss with the proposed device structure. The results can be explained by a freewheeling path between the drain electrode and the auxiliary gate, which enables effective dissipation of the stored charges.INDEX TERMS dual-gate (DG) structure, GaN, HEMT, reverse conduction

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Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Cited by 9 publications

References 22 publications

The effect of SiN _x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

The effect of SiN _x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

An insight to current collapse in GaN HEMT and suppressing techniques

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

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Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Cited by 9 publications

References 22 publications

The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

An insight to current collapse in GaN HEMT and suppressing techniques

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

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Product

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The effect of SiN _x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

The effect of SiN _x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors