Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0001) surface: A first principle calculation

Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects

“…In recent years, there have been some theoretical first-principles investigations on the influence of Al composition, doping and adsorption on electronic structure and properties of Ga1-xAlxN photocathodes [9][10][11][12][13]. However, the effects of vacancy defect are few reported.…”

Research on photoemission and spectra response of NEA Ga1−xAlxN photocathodes

“…According to Eqs. (5) and (9), the greater the electron escape probability P, the higher the quantum efficiency. The doping concentration of Mg atoms is essential to the values of electron escape probability.…”

“…With the band gap varying from 3.4 eV in GaN to 6.2 eV in AlN, negative electron affinity (NEA) Ga 1−x Al x N photocathodes are currently attracting extensive attention [5]. In the support of NASA, Stanford University, Northwestern University, the Berkeley branch School of California University carry on research on GaN/GaAlN ultraviolet photocathode.…”

The effect of surface cleaning on quantum efficiency in AlGaN photocathode

“…As we know, the carbon and oxide adsorbed on AlGaN photocathode surface, especially the aluminum oxides which are difficult to remove, would hinder the adsorption of the cesium (Cs) atoms on its surface during the activation process [14][15][16]. The atomically clean surface is a primary condition for preparation of high-performance AlGaN photocathode with negative electron affinity (NEA) surface through Cs adsorption.…”