Study of Columnar Growth Polycrystalline (Sn, Cr) co-doped In2O3 films deposited by sputtering technique for potential gas sensors applications

Carlos-Chilo, A.F.; Luza-Mamani, L.G.; Baldárrago-Alcántara, A.A.; Aragón, F.F.H.; Vera-Gonzales, Corina; Coaquira, J. A. H.; Sucasaire, W.; Rodríguez-Romero, Jesús; Pacheco‐Salazar, D. G.

doi:10.1016/j.vacuum.2018.08.032

Cited by 11 publications

(3 citation statements)

References 27 publications

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“…As observed, the images reveal a columnar-type growth. Similar growth was reported previously for SnO 2 and (Sn, Cr) co-doped In 2 O 3 films deposited using the same growth conditions [6,20]. The estimated thicknesses for the studied films are listed in table 1, and the thickness dependence on the deposition time is shown in figure 1(e).…”

Section: Resultssupporting

confidence: 77%

Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO₂ films deposited by DC sputtering

Guillen-Baca

Vilca-Huayhua

Paz-Corrales

et al. 2019

J. Phys. D: Appl. Phys.

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In this work, we present the study of undoped and Fe-doped SnO2 polycrystalline films grown by direct-current sputtering on glass substrates. X-ray diffraction (XRD) analysis revealed that the as-deposited films exhibit an amorphous phase, whereas, after 2 h of thermal annealing at 500 °C, the films showed a rutile-type structure with no evidence of secondary phases. Rietveld refinement analyses of the XRD patterns revealed that the undoped films do not reveal a preferred orientation as is displayed in the bulk system, whilst the Fe-doped films showed a (1 0 1) preferred orientation which is enhanced with the deposition time (film thickness). A detailed analysis revealed a clear dependence of the unit cell volume on the crystallite size. The latter effect was mainly associated with strain effects occurring during the film deposition. Additionally, the growth of columnar-shaped structures was determined by cross-section scanning electron microscopy images. Interesting features of the fundamental absorption were determined via UV–vis spectroscopy. The obtained results revealed a monotonous decrease of the band gap with film thickness, which becomes larger for the Fe-doped SnO2 films and is associated with a change in the residual strain, in good agreement with the XRD analysis and Raman spectroscopy measurements.

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Section: Resultssupporting

confidence: 77%

Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO₂ films deposited by DC sputtering

Guillen-Baca

Vilca-Huayhua

Paz-Corrales

et al. 2019

J. Phys. D: Appl. Phys.

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“…On the other hand, in previous results, we reported the successful growth of SnO 2 [17], Sn-doped In 2 O 3 , (Cr, Sn)-codoped In 2 O 3 [18] using a low deposition DC sputtering rate with a substrate-to-target distance below 20 mm, which promotes columnar growth. The control of the surface morphology and crystallographic orientation can affect the final properties of ZnO films.…”

Section: Introductionmentioning

confidence: 77%

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Paz-Corrales¹,

Vilca-Huayhua²,

Aragón³

et al. 2022

Phys. Scr.

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The control of native defects in the ZnO material is strongly important for a wide range of technological applications. In this paper, native defects are tuned via the post-thermal treatment of ZnO films in a high vacuum atmosphere. The microstructure of the as-grown ZnO film shows columnar growth and strongly polar-oriented grains along the c-plane (002). Also, the obtained results indicate that the as-grown film contains a high amount of intrinsic defects and strong lattice distortions. After the thermal annealing, the ZnO films display significant structural changes, which are reflected in their electrical, vibrational, and optical properties. Our findings suggest that these changes were attributed to the selective cleanup effect of the native defects and the partial deoxidation process mainly on the exposed particle surface (at high temperatures) tuned up by the thermal annealing temperature. According to DFT calculations, oxygen vacancies (VO) show lower energy, followed by zinc vacancies (Oi) and oxygen interstitials (VZn) indicating that VO defect is the most stable in ZnO. That sequence of stability could suggest the sequence of the annihilation of those defects, which is in line with our experimental findings.

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“…Among different metal oxide semiconductors, In 2 O 3 is found to be an important and most promising gas-sensing material owing to its good electrical conductivity and high chemical stability. Till date, various nanostructures based on In 2 O 3 for high-performance gas-sensing material in the form of thin films [78], nanowires [79], nanocrystals [80], and hollow microspheres have been developed [81].…”

Section: Gas Sensorsmentioning

confidence: 99%

Indium Oxide Based Nanomaterials: Fabrication Strategies, Properties, Applications, Challenges and Future Prospect

Khan¹,

Sarkar²,

Pal³

et al. 2021

Post-Transition Metals

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Nanostructured metal oxide semiconductors (MOS) in the form of thin film or bulk attract significant interest of materials researchers in both basic and applied sciences. Among these important MOSs, indium oxide (IO) is a valuable one due to its novel properties and wide range of applications in diversified fields. IO based nanostructured thin films possess excellent visible transparency, metal-like electrical conductivity and infrared reflectance properties. This chapter mainly highlights the synthesis strategies of IO based bulk nanomaterials with variable morphologies starting from spherical nanoparticles to nano-rods, nano-wires, nano-needles, nanopencils, nanopushpins etc. In addition, thin film deposition and periodic 1-dimensional (1D)/2-dimensional (2D) surface texturing techniques of IO based nanostructured thin films vis-à-vis their functional properties and applications have been discussed. The chapter covers a state-of-the-art survey on the fabrication strategies and recent advancement in the properties of IO based nanomaterials with their different areas of applications. Finally, the challenges and future prospect of IO based nanomaterials have been discussed briefly.

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Study of Columnar Growth Polycrystalline (Sn, Cr) co-doped In2O3 films deposited by sputtering technique for potential gas sensors applications

Cited by 11 publications

References 27 publications

Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO₂ films deposited by DC sputtering

Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO₂ films deposited by DC sputtering

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Indium Oxide Based Nanomaterials: Fabrication Strategies, Properties, Applications, Challenges and Future Prospect

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Study of Columnar Growth Polycrystalline (Sn, Cr) co-doped In2O3 films deposited by sputtering technique for potential gas sensors applications

Cited by 11 publications

References 27 publications

Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO2 films deposited by DC sputtering

Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO2 films deposited by DC sputtering

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Indium Oxide Based Nanomaterials: Fabrication Strategies, Properties, Applications, Challenges and Future Prospect

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Product

Resources

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Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO₂ films deposited by DC sputtering

Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO₂ films deposited by DC sputtering