Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring

Abstract

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage (Vt) can be used to accurately measure the chip local temperature by using a Vt extractor circuit. Furthermore, the circuit’s performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the Vt extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K–500 K temperature range while consuming only 30 µW during operation.

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“…Another element of the AFE is the PTAT voltage source. This is a modification of the BGR used in the PCS, but PTAT voltage source can use any architecture (e.g., [25]). Furthermore, the PTAT voltage source has to have a differential output; therefore, an additional voltage divider was added.…”

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“…Therefore, the accuracy of the integrated temperature sensor can be adjusted by changing the reference clock frequency provided to the counter, as shown in equation (1).…”

“…In the years that followed, various thermometers were developed by scientists. In 1821, German physicists first opened the door to turning temperature into electrical signals [1]. With the discovery of the first thermoelectric effect, it made the world's first true temperature sensor -thermocouple sensor, which brought the quantitative research on temperature into the stage of temperature sensor and thus kicked off the development of temperature sensor.…”

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“…The most important solid-state device is the bipolar junction transistor (BJT) made from silicon. It was for three decades the active device of choice in the analog design of integrated circuits used in wide applicability in electronics, including computers, televisions, mobile phones, audio amplifiers, industrial control, and radio-frequency (RF) circuits of the wireless systems [1], but today the use of the BJT has declined in favor of the CMOS technology in the design of digital integrated circuits (ICs) [2][3][4]. Due to the low impedance at the base, high transconductance, and output resistance compared to MOS devices, the BJT is characterized as currentcontrolled current source useful to compute nonlinear functions by their logarithm dependence between base-emitter voltage , collector current , and temperature, which recently has led to its integration into the CMOS-based architectures [5][6][7][8].…”