2010
DOI: 10.1016/j.solmat.2010.03.019
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Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures

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Cited by 14 publications
(17 citation statements)
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“…The value is found as 7.79 × 10 16 cm −3 , and the value of bi − 2 / is equal to 0.56 eV, which corresponds to bi = 0.61 eV. The calculated values are in good agreement with the reported values for commercially available silicon solar cells [36,37].…”
Section: Theory Validation and Characterization Of Lcpv Modulesupporting
confidence: 84%
“…The value is found as 7.79 × 10 16 cm −3 , and the value of bi − 2 / is equal to 0.56 eV, which corresponds to bi = 0.61 eV. The calculated values are in good agreement with the reported values for commercially available silicon solar cells [36,37].…”
Section: Theory Validation and Characterization Of Lcpv Modulesupporting
confidence: 84%
“…The CT capacitance describes the separation of charges in the depletion region and the CD capacitance describes the gradient in the charge density inside the solar cell [18,26]. For the AC case, the equivalent circuit of the solar cell is shown in Figure 2, where:…”
Section: Proposed Methods For Determining the Solar Cell Capacitancementioning
confidence: 99%
“…Consequently, the results of simulation could be compared to the experimental measurements. Additionally, in this stage the IS method [17,18,26] was used to The SC1 equivalent electrical circuit used is shown in Figure 1, where the D 1 diode is used in order to observe the dynamic behavior of the solar cell.…”
Section: Simulation and Experimental Setupmentioning
confidence: 99%
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