Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications

Noise Improvement of a-Si Microbolometers by the Post-Metal Annealing Process

“…As a result of the measured data, by performing the PMA process under the condition of D 2 forming gas, at 10 atm and 300 • C for 30 min, it is observed that the resistance decreased by about 60% compared to the reference microbolometer, and the TCR values increased up to 48.2%. Therefore, the fabricated a-Si microbolometers treated by the PMA process show TCR values of 2.4~3.5%/K and 1/f noise levels of around 10 −11 /Hz, which are comparable to those of the previously reported literatures [27][28][29]. Moreover, it is confirmed that the noise characteristics are improved in inverse proportion to the patten width of resistance layer.…”

“…In this respect, P. Sharma et al recently reported TCR values of 6-7%/K along with 1/f noise constant of 10 −12 in a porous Si-thin film with an optimized porosity of 60-75%, by passivating the surface at 600 • C to stabilize the film against atmospheric oxidation [27]. Moreover, there were reports on the results of comparing TCR values and 1/f noise characteristics according to the crystal structure of boron-doped hydrogenated mixed-phase silicon films for the IR device application [28,29]. In particular, C. Shin et al showed the TCR value of 1-3%, sheet resistance of 3-61.4 MΩ/sq, and 1/f noise of 4 × 10 −10 /Hz for the crystalline volume fraction (7-17%) of films [29].…”