Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching

Abstract

In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was investigated. Based on the infrared temperature measurement method, the temperature of the plasma reaction region was measured. The single factor method was used to study the effect of the working gas flow rate and the RF power on the plasma region temperature. Fixed-point processing of SiC wafers analyzes the effect of plasma region temperature on the etching rate. The experimental results showed that the plasma temperature increased with increasing Ar gas until it reached the maximum value at 15 slm and decreased with increasing flow rate; the plasma temperature increased with a CF4 flow rate from 0 to 45 sccm until the temperature stabilized when the flow rate reached 45 sccm. The higher the RF power, the higher the plasma region’s temperature. The higher the plasma region temperature, the faster the etching rate and the more pronounced the effect on the non-linear effect of the removal function. Therefore, it can be determined that for ICP processing-based chemical reactions, the increase in plasma reaction region temperature leads to a faster SiC etching rate. By processing the dwell time in sections, the nonlinear effect caused by the heat accumulation on the component surface is effectively improved.

Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

“…The plasma temperature is an important factor that affects the etching rate of the plasma. The available literature and preliminary experimental studies show that processing power plays a decisive role in determining the magnitude of the plasma temperature [ 20 ]. Studies show that the plasma temperature increases linearly with power, and the higher the processing power, the faster the plasma temperature increases.…”

Titanium-doped graphite-type silicon carbide biosensor for detecting and eliminating gaseous pollution: A green chemistry approach by molecular simulation study

“…As the polarizability of Si is more than C, so it is expected that, due to stronger Van der Waal's interaction, SiC/Si nanosurface can bind compounds more strongly compared to the pure carbon nanostructures. It is known that for optimum adsorption of gas molecules, the ideal form of binding between the host material (SiC nanosheet) and adsorbed gas molecules should be intermediate between physisorption and chemisorption energy [21][22][23][24][25][26] .…”