Study of Annealed NiO Thin Films Sputtered on Unheated Substrate

Auger electron spectroscopy of Au/NiO contacts on p-GaN annealed in N2 and O2+ N2 ambients

“…After annealing in N 2 , both gold and nickel are in contact with pGaN. NiO is a p-type semiconductor [17,19], thus after annealing in O 2 + N 2 the contact structure is NiO/Au/p-NiO/ p-GaN, whereby we validate the model proposed in Refs. [7,8].…”

H2 gas sensor performance of NiO at high temperatures in gas mixtures

“…According to the JCPDS database [8,9], rhombohedral NiO shows a (1 0 1) diffraction peak at 2Â = 37.249 • and cubic NiO bunsenite shows a (1 1 1) diffraction peak at 2Â = 37.281 • which is represented by the dashed vertical line. Experiments could not distinguish between rhombohedral NiO and cubic NiO bunsenite, because the peaks for both phases are very close [10]. The X-ray diffraction peak we see during our measurement is shifted from the expected position for both NiO bunsenite and rhombohedral NiO, which is likely due to compressive stress in the out-of-plane direction.…”

Thickness dependence of electrical and optical properties of sputtered nickel oxide films

“…Among these methods, reactive sputtering is most widely used one. Researches [6][7][8][9][10] have been carried out on the dependence of film properties of sputtering parameters. Many reference data and the results of previous studies [6 -10] show that the superior electric and optical properties of NiO films can be obtained by reactive sputtering with sputtering pressure in the range of 10 À 3 -10 À 2 Torr and in a pure oxygen atmosphere with a heated substrate.…”