Bi
2
Te
3
-based compounds are exclusive commercial
thermoelectric materials around room temperature. For n-type compounds,
optimal thermoelectric properties are normally obtained at temperatures
higher than room temperature to suppress the bipolar effect through
increased carrier concentration. We find that doping with trace amounts
of Cd and the addition of excess Bi are effective ways to optimize
carrier concentration and achieve enhanced room-temperature thermoelectric
performance for the Bi
2
Te
2.7
Se
0.3
alloy in this work. For the Cd-doped samples, the replacement of
Cd with Bi leads to not only a significant decrease in electron concentration
but also apparently reduces the total thermal conductivity. The addition
of excess Bi in the samples creates a Bi-rich synthetic atmosphere
during the synthesis process, leading to increased Bi
Te
antisite defects, decreased electron concentration, and reduced
total thermal conductivity. Doping a small amount of Cd or adding
excess Bi causes optimal thermoelectric performance of the n-type
Bi
2
Te
2.7
Se
0.3
sample shifts obviously
toward low temperatures, and the samples with 0.4 atom % Cd and 0.8
atom % excess Bi achieve maximum
zT
of ∼0.97
at 448 K and ∼0.88 at 348 K, respectively.