Study of ADI (After Develop Inspection) using electron beam

Saito, Misako; Hayashi, Teruyuki; Fujihara, Kaoru; Saito, K.; Lin, Jay; Midorikawa, Ryotaro

doi:10.1117/12.656090

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“…In the previous studies, we reported that e-beam inspection can detect 40-nm defects on a wafer with photo resist (PR) grating structure [3]. We also studied the capability of EBI capturing of program defects on 32nm nano imprint resist patterns.…”

Section: Introductionmentioning

confidence: 97%

After development inspection defectivity studies of an advanced memory device

Kim

Lee

et al. 2010

SPIE Proceedings

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In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced electron beam inspection (EBI) system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges. We also studied the critical dimension (CD) variations caused by the optical inspection and EBI.

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Section: Introductionmentioning

confidence: 97%